Growth and characteristics of reactive pulsed laser deposited molybdenum trioxide thin films

Structural, optical and morphological studies on laser ablated nanostructured WO3 thin films

“…The presence of sufficient oxygen pressure in the chamber enhances the formation of crystalline tungsten trioxide. In fact, this is the advantage of PLD technique where crystalline films can be grown at substrate temperatures as low as 300 K compared to other physical vapor deposition methods where the reported deposition temperatures should be in the range of 573-723 K for crystallization to occur [9,15,19,24]. of polycrystalline WO 3 in either monoclinic or triclinic crystalline phase [26].…”

Electrical transport properties of MoO3 thin films prepared by laser assisted evaporation

“…For numerous applications of MoO 3 , the material is prepared in thin film form [6]. MoO 3 thin films can be prepared by diverse methods [9,10]: thermal evaporation, sputtering, electrochemical deposition, etc. Nevertheless, the physical properties of the thin films depend on the deposition technique [11].…”

Structural and electrical characterization of magnetron sputtered MoO3thin films

“…When oxygen partial pressure increased to 2x10 -4 mbar, the films showed only the (0k0) reflections indicated the orthorhombic α -phase of molybdenum oxide. Further increase of oxygen partial pressure to 8x10 -4 mbar the presence of (200) also noticed with the oxygen partial pressure in pulsed laser deposited films [17]. From the XRD studies it revealed that the oxygen partial pressure of 2x10 -4 mbar is an optimum to produce single phase orthorhombic α-phase MoO 3 films.…”