Structural and electrical characterization of magnetron sputtered MoO<sub>3</sub>thin films

Nirupama, V.; Sekhar, M. Chandra; Subramanyam, T. K.; Uthanna, S.

doi:10.1088/1742-6596/208/1/012101

Cited by 24 publications

(10 citation statements)

References 20 publications

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“…Also shows that the film deposited at substrate temperature of 500 o C have the maximum value of conductivity. The variations of values in conductivity may be due to the oxygen vacancies in the prepared WO 3 thin films 21,[26][27][28] . The increasing of conductivity with the substrate temperature owing to the variation in morphology and the increasing of grain size, which reduced the lattice dislocations and imperfections of the W-O matrix.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Growth and Characterization of Jet Nebulizer Spray Deposited n-type WO3 thin films for Junction Diode Application

Shanmugasundaram¹,

Thirunavukkarasu²,

Ramamurthy³

et al. 2017

Orient. J. Chem

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The n-type tungsten oxide (WO 3 ) polycrystalline thin films have been prepared at an optimized parameters (0.20M, 5 ml and 500 o C) using jet nebulizer spray pyrolysis (JNSP) technique. Such prepared WO 3 films were characterized by XRD, SEM, EDAX, UV-vis from I-V. The XRD pattern of the optimized WO 3 film reveals the monoclinic structure. The SEM and EDAX images shows that the surface morphological variations and elements present were confirmed. The optical properties were recorded by UV-vis spectrum and the maximum band gap value was observed as 3.86 eV for 500°C. The maximum conductivity of the prepared WO 3 was recorded as 1.201 x 10 -8 S/cm from I-V characterization for 500°C.Using J-V plot, the diode parameters of n-WO 3 /p-Si prepared at 500°C with 0.2 M and 5 ml were measured under dark and illumination. The ideality factor (n) and barrier height (Φ b ) values of n-WO 3 /p-Si diode are obtained as 5.8 and 0.80 eV in dark and 3.9 and 0.81 eV under illumination.

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Section: Electrical Propertiesmentioning

confidence: 99%

Growth and Characterization of Jet Nebulizer Spray Deposited n-type WO3 thin films for Junction Diode Application

Shanmugasundaram¹,

Thirunavukkarasu²,

Ramamurthy³

et al. 2017

Orient. J. Chem

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“…The presence of oxidation state Mo 6+ was indicative of the compound MoO 3 , while the presence of Mo 5+ and Mo 4+ was associated with substoichiometric compounds including Mo 2 O 5 and MoO 2 (Table I). 2,20,21,43,67,[68][69][70][71] Furthermore, at f O 2 ð Þ < 1.00 sccm, metallic Mo was also present. It is highly likely that small quantities of additional suboxides were present within the films; however, their presence was indistinguishable from the uncertainty inherent in the peak fitting process.…”

Section: X-ray Photoelectron Spectroscopymentioning

confidence: 99%

“…For molybdenum oxides, the exponent is 2, due to their intrinsic ability to facilitate indirect-allowed band-to-band transitions. 68,73,74 A Tauc plot was then generated, wherein (ahm) 1/2 (eV 1/2 cm À1/2 ) was plotted as a function of photon energy, hm (eV). The optical bandgap (E g ) was determined by extrapolating the linear portion of the plotted data to the corresponding photon energy where (ahm) 1/2 is equal to zero.…”

Section: Transmission Measurements and Bandgap Calculationmentioning

confidence: 99%

Molybdenum Oxides Deposited by Modulated Pulse Power Magnetron Sputtering: Stoichiometry as a Function of Process Parameters

Murphy

Sun

Grant

et al. 2015

Journal of Elec Materi

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Molybdenum oxide films were deposited using modulated pulse power magnetron sputtering (MPPMS) from a molybdenum target in a reactive environment where the flow rate of oxygen was varied from 0 sccm to 2.00 sccm. By varying the amount of reactive oxygen available during deposition, the composition of the films ranged from metallic Mo to fully stoichiometric MoO 3 , when the molybdenum target became poisoned, due to the formation of a dielectric surface oxide coating. Film compositions were verified using high energy resolution x-ray photoelectron spectroscopy. Target poisoning occurred at an oxygen flow rate of 1.25 sccm and reversed when the flow rate decreased to about 1.00 sccm. MoO 3 films deposited via MPPMS had densities of 3.8 g cm À3 , 81% of the density of crystalline a-MoO 3 as determined by x-ray reflectivity (XRR). In addition, XRR and atomic force microscopy data showed sub-nanometer surface roughness values. From spectroscopic ellipsometry, the measured refractive index of the MoO 3 films at 589 nm was 1.97 with extinction coefficient values <0.02 at wavelengths above the measured absorption edge of 506 nm (2.45 eV).

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“…In spite of numerous studies paying attention to the physicochemical properties and applications of molybdenum oxides, only few works have investigated their mechanical properties [37] and, to the best of our knowledge, none of them are related to the mechanical behaviour of electrodeposited molybdenum oxide films. Actually, since the adherence of electrodeposited molybdenum oxide films to the substrate is poor or either the layers feature cracks, the measurement of their mechanical properties by micro-or nanoindentation is certainly not straightforward.…”

Section: Introductionmentioning

confidence: 99%

Structurally and mechanically tunable molybdenum oxide films and patterned submicrometer structures by electrodeposition

Quintana

Varea

Guerrero

et al. 2015

Electrochimica Acta

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Abstract1.5 m-thick molybdenum oxide films have been electrodeposited potentiostatically from 0.2 M Na 2 MoO 4 electrolyte onto indium tin oxide (ITO)/glass substrates at pH = 1, 6 and 9. The influence of cetyltrimethylammonium bromide (CTAB) surfactant on films' adhesion, morphology, degree of porosity, molybdenum speciation, and crystallographic structure has been systematically investigated. The addition of CTAB (0.01 M) to the bath clearly improves film adherence to the substrate, reduces cracking, and increases crystallinity. This has an impact on the physical properties of the films. In particular, both hardness (H) and Young's modulus (E) increase, as determined from nanoindentation tests.The growth of ordered arrays of molybdenum oxide submicrometer structures, including pillars and stripes, by electrodeposition onto e-beam lithographed Au/Ti/Si substrates is also reported.

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Structural and electrical characterization of magnetron sputtered MoO₃thin films

Cited by 24 publications

References 20 publications

Growth and Characterization of Jet Nebulizer Spray Deposited n-type WO3 thin films for Junction Diode Application

Growth and Characterization of Jet Nebulizer Spray Deposited n-type WO3 thin films for Junction Diode Application

Molybdenum Oxides Deposited by Modulated Pulse Power Magnetron Sputtering: Stoichiometry as a Function of Process Parameters

Structurally and mechanically tunable molybdenum oxide films and patterned submicrometer structures by electrodeposition

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Structural and electrical characterization of magnetron sputtered MoO3thin films

Cited by 24 publications

References 20 publications

Growth and Characterization of Jet Nebulizer Spray Deposited n-type WO3 thin films for Junction Diode Application

Growth and Characterization of Jet Nebulizer Spray Deposited n-type WO3 thin films for Junction Diode Application

Molybdenum Oxides Deposited by Modulated Pulse Power Magnetron Sputtering: Stoichiometry as a Function of Process Parameters

Structurally and mechanically tunable molybdenum oxide films and patterned submicrometer structures by electrodeposition

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Structural and electrical characterization of magnetron sputtered MoO₃thin films