Growth and Characterization of Jet Nebulizer Spray Deposited n-type WO3 thin films for Junction Diode Application

Shanmugasundaram, K.; Thirunavukkarasu, P.; Ramamurthy, M.; Balaji, M.; Chandrasekaran, J.

doi:10.13005/ojc/330542

Cited by 21 publications

(8 citation statements)

References 27 publications

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“…Table 1 shows the expected values for Eg. As the molarity concentration increased to 80 mM, the band gap values of WO3 thin films decreased from 3.40 to 2.63 eV, then climbed to 2.82 eV, as displayed in Figure 1d, which is in good agreement with research [4,20,21]. The decrease in band gap energy was caused by a lattice defect that may create energy tails within the energy gap, shifting the Fermi level towards the conduction band [51].…”

Section: Uv-visible Propertiessupporting

confidence: 86%

“…Furthermore, the synthesis of a porous fibrous network of WO3 thin films was found in the study to have an energy gap and activation energy greater than the values obtained in our work. In another study, P. T. K. Shanimugasudram et al [21]. The effect of concentration on the structural properties was observed by increasing the intensity of the peaks and increasing the electrical conductivity at optimum conditions.…”

Section: Introductionmentioning

confidence: 88%

“…When compared to other temperatures, I value are exceptionally high at 423K [4]. The electrical DC conductivity was computed using the following equation ( 14) [21,57].…”

Section: Electrical Conductivitymentioning

confidence: 99%

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Effect of Precursor Concentration on the Structural, Optical, and Electrical Properties of WO3 Thin Films Prepared by Spray Pyrolysis

Mohammed¹,

Salim²,

Hassan³

et al. 2022

JASN

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Using a chemical spray technique, an n-type WO3 polycrystalline thin film was prepared with optimizing parameters (molarity concentration of 80 mM and a substrate temperature of 350 °C). Study the physical properties of WO3 thin film via UV-Visible spectroscopy, XRD, Field Emission-Scanning Electron Microscope, Energy Dispersive X-ray Spectroscopy, Atomic Force Microscopy, and current-voltage. Tungsten oxide was deposited on glass surfaces at different molarities ranging from 50-90mM. In the UV-Visible spectrum of the WO3 thin film, it was found that the transmittance, reflectivity, and energy gap decreased (78%-53%), (9.63%-5.02%), and (3.40eV-2.63 eV), respectively. The X-ray diffraction of the WO3 film at the optimized was poly-crystalline and had a monoclinic phase, and the preferred orientation (hkl) was 200 at 2 = 24.19. From the image FESEM and EDX, it was found that it has a multi-fibrous network. The average diameter of the fiber is 266 nm, and the ratio of tungsten to oxygen (W/O) is 2.6, with a stoichiometric of 68.6% at the 80 mM concentration. The Atomic Force Microscopy shows that the WO3 thin layer has a nanostructure. The average surface roughness was 5.3 nm, and the Root Mean Square was 8.6 nm. The WO3 film had the lowest resistivity value of 2.393 × 108 cm, and the activation energy was 0.298 eV, among the parameter of the current voltage at substrate temperature and concentration optimum.

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Section: Uv-visible Propertiessupporting

confidence: 86%

Section: Introductionmentioning

confidence: 88%

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Effect of Precursor Concentration on the Structural, Optical, and Electrical Properties of WO3 Thin Films Prepared by Spray Pyrolysis

Mohammed¹,

Salim²,

Hassan³

et al. 2022

JASN

View full text Add to dashboard Cite

show abstract

“…The binary [1][2][3][4][5][6][7][8] , ternary [9][10][11][12][13][14][15] , quaternary [16][17][18] and penternary compounds [19][20][21][22] have received great attention owning to their unique properties. These films are used in a wide variety of applications such as solar cell [23][24][25] , sensors 26 , photodiode arrays 27 , photoconductors 28 and optoelectronic devices 29 .…”

Section: Introductionmentioning

confidence: 99%

Raman Investigations of Metal Chalcogenide Thin Films (A Short Review)

et al. 2019

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Cu In Se2 thin films are very important semiconductor material for solar cell applications because of chemical stability, direct band gap and high optical absorption coefficient. In this work, these films have been prepared by using different deposition techniques such as electrodeposition, solvothermal, vacuum evaporation, hydrothermal and pulsed electrode position technique. Cu In Se2 thin films were fully characterized by using field emission scanning electron microscopy, X-ray diffraction, Energy dispersive X-ray analysis, atomic force microscopy, UV-Visible spectrophotometer and Raman spectroscopy in order to study physical properties.

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“…ZnO films can be grown using the following techniques such as thermal evaporation, spray pyrolysis, chemical vapour deposition, dip coating, etc., and [7][8][9][10][11][12][13][14] . Among them dip coating method was chosen from the list for preparing thin films and JNSP technique 15,16 was opted for preparing P-N junction diodes.…”

Section: Introductionmentioning

confidence: 99%

Investigation on Al Doped Zno Thin Films and its N-Alzno/P-Si Junction Diodes Via Dip Coating and JNSP Techniques

Kalidass

Thirunavukkarasu

Balaji³

et al. 2018

Orient. J. Chem

Self Cite

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From this investigation, we find out that the dip coating and jet nebulizer spray pyrolysis (JNSP) techniques are the suitable to fabricate aluminum doped zinc oxide (AlZnO) thin films and the P-N junction diode of n-AlZnO/p-Si at 450°C. Several characterization techniques are used to measure the consequences of Al doping (0, 0.5, 1.0, 1.5, 2.0 and 2.5 wt.%) on structural, optical, electrical and diode properties of ZnO. We recorded that the films were polycrystalline with a hexagonal structure of ZnO by the X-ray diffraction (XRD) analysis. The disparities of the sub-micro sized rod-like structures are observed from the scanning electron microscope (SEM) images. The energy dispersive X-ray spectroscopy (EDX) analysis proved that the elements of Al, Zn and O were presented in the film. The absorbance and band gap energy (Eg) values were ascertained from the ultraviolet visible (UV-vis) analysis. By the current-voltage (I-V) characterization, the maximum conductivity value is detected for 1.5 wt.% of Al doped ZnO film. The I-V measurement for finding the diode parameters of ideality factor (n) and barrier height (Fb) in dark and under light was taken.

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Growth and Characterization of Jet Nebulizer Spray Deposited n-type WO3 thin films for Junction Diode Application

Cited by 21 publications

References 27 publications

Effect of Precursor Concentration on the Structural, Optical, and Electrical Properties of WO3 Thin Films Prepared by Spray Pyrolysis

Effect of Precursor Concentration on the Structural, Optical, and Electrical Properties of WO3 Thin Films Prepared by Spray Pyrolysis

Raman Investigations of Metal Chalcogenide Thin Films (A Short Review)

Investigation on Al Doped Zno Thin Films and its N-Alzno/P-Si Junction Diodes Via Dip Coating and JNSP Techniques

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