Growth and characterization of AgIn5S8 and CuIn5S8 thin films

Abstract

Spinel AgIn 5 S 8 and CuIn 5 S 8 materials are perspective for application in optoelectronic semiconductor devices. For the first time, thin films of these compounds were grown and investigated. The films were deposited by a sequential process on Mo-coated soda lime glass. This process consists of sulphur vapour sulphurization of a metallic alloy precursor. We found that a good adhesion to the substrate (Mo-coated glass) could be achieved by introduction of a Ti layer between the substrate and the spinel layer. The spinel layers have been investigated by XRD and XPS methods. Moderate roughness of the films and a crystallite size of about 200 -400 nm were observed in the AFM images.

Annealing effects on the structural and optical properties of AgIn5S8 thin films

“…becomes in the (3 1 1) direction. These preferable (1 1 1), (4 2 0) and (3 1 1) orientations of the as-grown, thermally annealed at 450 and 600 K, respectively, agree well with our previous reported data for thin film and single crystal [4,7], with that reported for AgIn 5 S 8 thin films grown by the pulsed laser deposition technique [3], with that reported for films grown by the spray technique [8], and with that reported for grown by the sulphurization of Ag-In alloy films in sulphur vapour [5,9].…”

“…One of these ternary semiconductors is the compound AgIn 5 S 8 , which have attracted considerable attention [1][2][3][4][5][6]. AgIn 5 S 8 thin films have been fabricated by the pulsed laser deposition [3], thermal vacuum evaporation [4], vapour phase deposition [5], and spray pyrolysis [6] techniques.…”

“…AgIn 5 S 8 thin films have been fabricated by the pulsed laser deposition [3], thermal vacuum evaporation [4], vapour phase deposition [5], and spray pyrolysis [6] techniques. Some of the room temperature structural, electrical, photoconductive and optical properties of these films have been investigated [1][2][3][4][5][6]. Furthermore, AgIn 5 S 8 have been successfully used in technological applications.…”

Experimental investigation of the effect of indium content on the CuIn5S8 electrodes using electrochemical impedance spectroscopy

“…An efficiency of about 9.1% was associated with the p-CuInS 2 /CuI/nCuIn 5 S 8 tandem structure solar cell [8]. A variety of physical and chemical techniques have been employed to fabricate this material [11][12][13]. Among these methods, electrodeposition as a cheap and facile method is widely used for the co-deposition of copper indium sulfide thin films under particular conditions [14][15][16][17].…”

Photoconductivity kinetics in AgIn5S8 thin films

“…AgIn 5 S 8 thin films are attracting considerable attention [1][2][3][4][5][6][7][8] due to their technological applications. It has been shown that the photosensitive AgIn 5 S 8 /(InSe, GaSe) heterojunctions can be fabricated using bulk crystals grown from the melt and from the vapor phase or polycrystalline thin films of the ternary compound.…”