Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPE

Growth temperature effects on boron incorporation and optical properties of BGaAs/GaAs grown by MOCVD

“…and composition fluctuations in BGaAs epilayer. A previous study has shown these crystal imperfections by the atomic force microscopy [9,11]. Rodriguez has shown by AFM for layers grown at 580 • C a transition from a surface with indistinct terraces (2D nucleation) to a bunching step/terrace structure B 2 H 6 flow rate [9].…”

“…They varied the temperature from 550 • C to 600 • C and they did not decrease below 550 • C. Moreover, Geisz and al deduced that the boron incorporation efficiency is maintained at lower temperatures when using TEG rather than TMG [3]. In the basic of this optimization, Rodriguez et al have used TEG III group precursor [9]. They have decreased the growth temperature and have increased the initial mole flow-rate X v to 62%.…”

Structural and optical study of BxInyGa1−x−yAs/GaAs and InyGa1−yAs/GaAs QW's grown by MOCVD

“…The boron composition was varied by varying V/III flux ratio [7][8][9][10][11][12][13]. HRXRD measurements for (0 0 4) plane reflection was performed systematically with the copper target ( CuK␣1 = 1.54056 Å) radiation from a Discover D8 (40 kV 55 mA) high power Xray generator.…”

“…In parallel with the theoretical investigations of band structures of recent boron-incorporated alloys, there emerged some experimental attempts to grow these materials. In particular, in the past few years, BGa(In)As alloys with boron content up to several percents have been successfully grown on GaAs by metalorganic chemical vapour deposition (MOCVD) [1,2], metalorganic vapour phase epitaxy (MOCVD) [3,4], and molecular-beam epitaxy (MBE) [5][6][7]. In addition, application of BGaInAs lattice-matched to GaAs for highefficiency solar cells has also been demonstrated [8,9].…”

“…BGaAs and BInGaAs alloys [1][2][3][4][5][6][7][8][9][10][11][12] are candidates for applications in multijunction solar cells and detectors. B x Ga 1−x As with boron concentrations up to 4% is obtained by metalorganic chemical-vapour-deposition (MOCVD) or molecular-beam epitaxy (MBE).…”