Growth and characterization of CdTeSe for room-temperature radiation detector applications

Abstract

The near-unity segregation coefficient of Se in a CdTe matrix ensures the compositional homogeneity, both axial-and radial, of the CdTeSe ternary compound, so making it a material of choice for room-temperature radiation detectors. In this study, we grew CdTeSe crystals by the Traveling Heater Method (THM), using Te as the solvent, and characterized the crystals by IR transmission microscopy, white-beam X-ray diffraction topography, and low-temperature photoluminescence. The total average concentration of the secondary phases obtained for the CdTeSe sample was about 7x10 4 cm -3 for crystals grown at two different laboratories. The best resistivity registered was 5x10 9 ohm-cm, and the estimated µτ product for the electrons was 3-4x10 -3 cm 2 /V.

Brief review of cadmium telluride-based photovoltaic technologies

“…For the case of CdSe, an x value of ∼0.05 would be adequate. It should be noted that CdTe 1−x Se x crystals have enhanced charge transport properties compared to CdTe crystals, 33 and the lattice constant of CdSe (6.05 Å) is between CdS (5.83 Å) and CdTe (6.48 Å). Use of a Cd-Se-S or CdSe/CdS junction-partner would allow alloying of the CdTe absorber with both S and Se during the CdCl 2 treatment step and reduce the lattice mismatch further.…”