Growth and characterization of co-sputtered Al-doped ZnGa2O4 films for enhancing deep-ultraviolet photoresponse

Growth and Performance Enhancement of Sputtered ZnGa2O4 MOSFETs on Sapphire Substrates

“…Consequently, the exploration of materials with wider band gaps has become imperative for the next generation of power semiconductor materials. Zinc gallate (ZnGa 2 O 4 ), with a band gap of 4.4–5.2 eV, boasts a broader band gap compared to commonly used wide-band-gap materials like GaN and SiC. , It also exhibits a higher critical electric field strength and saturation electron drift velocity and a lower thermal resistance coefficient . These advantages encompass reduced energy consumption, heightened current density, elevated temperature resilience, and diminished epitaxial growth costs.…”

“…The ZnGa 2 O 4 spinel exhibits cubic symmetry with the Fd 3̅ m space group, where oxygen atoms are densely packed in a cubic arrangement and cation atoms are arranged in a face-centered cubic pattern. Although ZnGa 2 O 4 possesses a wide band gap and has the capacity to absorb deep ultraviolet (<280 nm) light, exhibiting its potential for applications in deep ultraviolet light sensors, flame detection, ozone layer monitoring, and optical communication, ,− its transistor characteristics remain unexplored. The ample band gap of the ZnGa 2 O 4 material endows it with the capability to withstand high breakdown voltages, showcasing outstanding chemical and thermal stability.…”

Growth and Characterization of Sputtered ZnO:ZnGa2O4 Dual-Phase Films on Sapphire Substrates for NO Gas-Sensing Applications

“…27−32 Recently, ZnGa 2 O 4 has been widely applied as an active sensing material in gas sensors to ensure rapid detection because of their wide detection range, low power consumption, easy fabrication, high stability, and reproducibility at low detection costs. 6,33 In addition to this, ZnGa 2 O 4 has potential applications in gas sensors, deepultraviolet photodetectors, 34 transistors, 35−37 phosphors, and so on 38,39 due to its catalytic activity and high chemical and thermal stability under a harsh environment. So far, this material has been extensively grown by many methods such as radio-frequency magnetron sputtering 40 metal−organic chemical vapor deposition, 41 and so on.…”

“…Since the NO x gas sensors made from certain oxide materials (SnO 2 , ZnO, WO 3 , and In 2 O 3 ) cannot operate above 400 °C, the use of long-term stable Ga 2 O 3 - and ZnGa 2 O 4 -based gas sensors for detecting NO x gases is advantageous . In order to shed the light on various sensors and sensing characteristics of the aforementioned materials, the readers are advised to go through some amazing articles, which broadly discuss the recent advances in gas sensors, sensing performances, sensing mechanism, and influencing factors. − Recently, ZnGa 2 O 4 has been widely applied as an active sensing material in gas sensors to ensure rapid detection because of their wide detection range, low power consumption, easy fabrication, high stability, and reproducibility at low detection costs. , In addition to this, ZnGa 2 O 4 has potential applications in gas sensors, deep-ultraviolet photodetectors, transistors, − phosphors, and so on , due to its catalytic activity and high chemical and thermal stability under a harsh environment. So far, this material has been extensively grown by many methods such as radio-frequency magnetron sputtering metal–organic chemical vapor deposition, and so on.…”

The Effect of Annealing Ambience on the Material and Photodetector Characteristics of Sputtered ZnGa2O4 Films

“…Hence, the development of ZnGa 2 O 4 film-based PDs is essential. ZnGa 2 O 4 films have been reported earlier by several research groups using radio-frequency (RF) magnetron sputtering [19,20], pulsed laser deposition [21], metal-organic chemical vapor deposition (MOCVD) [22], and mist-CVD [23]. Among these, RF magnetron sputtering is a cost-effective and dependable technology that is extensively utilized by industrial processes to build commercial optoelectronic devices.…”