Growth and Characterization of Cubic SiC Single‐Crystal Films on Si

Powell, J. A.; Matus, L. G.; Kuczmarski, Maria A.

doi:10.1149/1.2100708

Cited by 197 publications

(56 citation statements)

References 21 publications

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“…Powell et al [16] A single precursor containing both silicon and carbon can also be used in CVD process. Steckl et al [18] have successfully investigated the growth of 3C-SiC on Silicon substrate using silacyclobutane (SCB) at temperatures as low as 800 o C. Kunstmann et al [19] have reported the growth of 3C-SiC films using methyltrichlorosilane (Ch 3 SiCl 3 ) at temperature around 1200 o C.…”

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confidence: 99%

An Innovative High Thermal Conductivity Fuel Design

Tulenko¹,

Baney²

2007

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mentioning

confidence: 99%

An Innovative High Thermal Conductivity Fuel Design

Tulenko¹,

Baney²

2007

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“…A typical APCVD reactor is comprised of a cooled wall chamber, reactive gas inlet, exhaust port, a substrate susceptor centrally positioned in the reactor chamber and heating coils . During the deposition, a carbonisation process (Nishino et al, 1983;Powell et al, 1987;Zorman et al, 1995) is initially applied to a clean Si surface, followed by SiC growth using Si and C containing precursors. SiC growth rate up to several microns per hour can be achieved with the potential to be doped into N and P types.…”

Section: Atmospheric Pressure Chemical Vapour Depositionmentioning

confidence: 99%

A review of silicon carbide development in MEMS applications

Jiang

Cheung

2009

IJCMSSE

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Due to its desirable material properties, Silicon Carbide (SiC) has become an alternative material to replace Si for Microelectromechanical Systems (MEMS) applications in harsh environments. To promote SiC MEMS development towards future cost-effective products, main technology areas in material deposition and processes have attracted significant interest. The developments in these areas have contributed to the rapid emergence of SiC MEMS prototypes. In this paper, we give an overview of the important developments in SiC material formation and fabrication processes in recent years. Some of the most interesting state-of-the-art SiC MEMS devices are reviewed. This highlights the major progresses in SiC MEMS developed thus far. This paper also looks into the prospect of SiC MEMS drawing attention to potential issues.

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“…However, all the SiC films show columnar microstructures with a strong preferred orientation of (111) plane. Various systems and growth procedures for CVD SiC have been reported elsewhere [13]- [16]. Material characterization has shown that CVD SiC meets the major property requirements for the microengine such as high strength and conformality.…”

Section: A Lpcvd Sic and Residual Stress Controlmentioning

confidence: 99%

Development of Si–SiC Hybrid Structures for Elevated Temperature Micro-Turbomachinery

Moon

Choi

Spearing

2004

J. Microelectromech. Syst.

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Abstract-The design of the Massachusetts Institute of Technology (MIT) microengine is limited in part by the material capability of Si primarily due to the pronounced thermal-softening and strain-softening at temperatures higher than the brittle-to-ductile transition temperature (BDT), approximately 550 C. In order to circumvent this limitation, it has been proposed to reinforce the Si with chemical vapor deposited (CVD) SiC in strategic locations to create a Si-SiC hybrid microengine turbine spool. Detailed design of Si-SiC hybrid structures for high temperature micro-turbomachinery, however, has been hampered by the lack of understanding of the mechanical behavior of Si and SiC hybrid structures at elevated temperatures and by the unavailability of accurate material properties data for both Si and SiC at the temperatures of interest. In this work, a series of initial thermomechanical FE analyzes have been performed to assess the advantage of the hybrid structures, and to provide structural design criteria and fabrication requirements. Then, the feasibility of the Si-SiC hybrid structures concept for elevated temperature micro-turbomachinery was verified based on more rigorous mechanical testing at high temperatures. Finally, the Si-SiC hybrid spool design was critically reevaluated with regard to creep using a Si constitutive model developed as a separate effort.[0988]Index Terms-Finite element analysis, mechanical testing, Massachusetts Institute of Technology (MIT) microengine, Si-SiC hybrid structures.

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Growth and Characterization of Cubic SiC Single‐Crystal Films on Si

Cited by 197 publications

References 21 publications

An Innovative High Thermal Conductivity Fuel Design

An Innovative High Thermal Conductivity Fuel Design

A review of silicon carbide development in MEMS applications

Development of Si–SiC Hybrid Structures for Elevated Temperature Micro-Turbomachinery

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