Growth and characterization of device quality GaAs produced by laser-assisted atomic layer epitaxy using triethylgallium

Chen, Q.; Dapkus, P.D.

doi:10.1016/0040-6090(93)90138-f

Cited by 8 publications

(4 citation statements)

References 8 publications

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“…A much less studied approach for ASD is Photo‐assisted ALD (Photo‐ALD), where photons deliver energy to activate the deposition chemistry. [ 12–19 ] Photons excite either the adsorbed or gaseous precursors, or both, to facilitate ALD chemistry. ASD is straightforward for large features with Photo‐ALD by simply masking the photon beam so that the non‐growth areas are shadowed under the mask.…”

Section: Introductionmentioning

confidence: 99%

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Highly Material Selective and Self‐Aligned Photo‐assisted Atomic Layer Deposition of Copper on Oxide Materials

Miikkulainen

Vehkamäki

Mizohata³

et al. 2021

Adv Materials Inter

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There is a growing need for bottom‐up fabrication methods in microelectronic industry as top‐down, lithography‐based methods face increasing challenges. In Photo‐assisted atomic layer deposition (Photo‐ALD), photons supply energy to the deposition reactions on the surface. Here, a process and patterning for Photo‐ALD of copper is reported, with inherently selective, self‐aligned film growth without any photomasking or additive layers. Highly conductive and pure copper films are selectively deposited on tantalum oxide for over hundred nanometers of film thickness, while no copper deposits on silicon or aluminum oxide. On anatase titanium dioxide, copper deposition is crystal‐facet selective. Selective deposition of a metal is realized on oxides, which has been especially challenging for ALD. This study indicates that the growth mechanism is closely related to photocatalysis: the photons interact with the material under the growing copper film, enabling the inherent selectivity. The findings provide promising material engineering schemes for microelectronics, photocatalysis, and photovoltaics.

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Section: Introductionmentioning

confidence: 99%

“…Photo‐ALD has been studied for deposition of only a limited number of materials, including GaAs, BN, and metal oxides. [ 12–19 ]…”

Section: Introductionmentioning

confidence: 99%

Highly Material Selective and Self‐Aligned Photo‐assisted Atomic Layer Deposition of Copper on Oxide Materials

Miikkulainen

Vehkamäki

Mizohata³

et al. 2021

Adv Materials Inter

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“…There are only limited number of papers reporting photo-ALD processes, apparently mostly due to challenging construction of the photo-ALD reactors. The studied materials include GaAs, ZnO, Ta2O5, ZrO2, BN, TiO2 and Al2O3 (7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19).…”

Section: Introductionmentioning

confidence: 99%

(Invited) Photo-Assisted ALD: Process Development and Application Perspectives

et al. 2017

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Atomic layer deposition (ALD) is a highly versatile thin-film deposition method that is presently utilized in many steps within microelectronic process flow and is gaining more and more interest in other fields of industry as well. The prosperity of ALD originates from its capability to controllably deposit high-quality films uniformly and conformally over large areas and complicated features. However, one of the main challenges of ALD, lateral control of film growth, stems from these same properties. Selective-area ALD (S-ALD) is presently a subject of intense research and development work as the targeted feature sizes in the semiconductor applications have reduced to a level exceeding the capabilities of lithography methods. Photo-assisted ALD (Photo-ALD) is a less-studied approach to facilitate S-ALD and selection of materials accessible with Photo-ALD is scarce. The present paper contributes to this field by reporting studies on Photo-ALD processes for metal oxides and metals.

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“…Depending on the growth process this may change the properties of the grown material from doping to chemical composition levels. Laser-assisted epitaxy has been investigated for materials such as GaAs/AlGaAs [53] and Si [54]. The approach has been demonstrated in successful fabrication of multiwavelength laser arrays based on InP/InGaAsP microstructures [55].…”

Section: Monolithically Integrated Photonic Devicesmentioning

confidence: 99%

Laser Precision Microfabrication

2010

Springer Series in Materials Science

167

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Growth and characterization of device quality GaAs produced by laser-assisted atomic layer epitaxy using triethylgallium

Cited by 8 publications

References 8 publications

Highly Material Selective and Self‐Aligned Photo‐assisted Atomic Layer Deposition of Copper on Oxide Materials

Highly Material Selective and Self‐Aligned Photo‐assisted Atomic Layer Deposition of Copper on Oxide Materials

(Invited) Photo-Assisted ALD: Process Development and Application Perspectives

Laser Precision Microfabrication

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