Thermal decomposition of trimethylgallium in H2 , N2 , and their admixtures is studied using molecular beam sampling mass spectrometry. Methane and ethane are found as the primary volatile byproducts of decomposition. The relative amount of CH4 increases and C2H6 decreases with an increase in H2 concentration relative to N2 . The activation energy for the rupture of the first Ga‐methyl bond is found to be E1normala=64.6 normalkcal/normalmol . The activation energies for the rupture of the second and third Ga‐methyl bonds are estimated to be E1normalb=52.6 normalkcal/normalmol and E1normalc=54.1 normalkcal/normalmol . Our data reinforce a radical mechanism where normalTMGa decomposes by way of successively releasing its three methyl radicals.

No abstract

No abstract

The kinetics of atomic layer epitaxy (ALE) of GaAs utilizing trimethylgallium and arsine are described. The results show that saturated monolayer growth can be achieved-in the temperature range 445°C -485°C and that high quality materials can be grown.. Hybrid A1GaAs/GaAs heterostructures have been grown utilizing ALE for the active regions and conventional metalorganic chemical vapor deposition (MOCVD) for the confining regions that yield high quality quantum wells and low threshold quantum well lasers.

No abstract