Growth and characterization of Ga(In)NAs on GaAs substrates

Abstract

The growth of Ga(In)NAs/GaAs is investigated by a DC plasma-assisted MBE. The N incorporation, composition fluctuations and strain relaxation are characterized by x-ray diffraction measurements and the dynamical simulations. 6-GaN,As,,/GaAs superlattices and GaN,As,., alloys of good quality are obtained through optimizing the growth conditions. Rapid-thermal annealing can improve the quality of Ga(In)NAs/GaAs significantly.