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Many spectroscopic and medical applications require lasers with emission wavelength of 2-3 pm.Besides the traditional Sb-based alloys lattice-matched to GaSb substrate, strained InAsNhGaAs quantum-well ( Q Y ' s t r u c k on InP substrate is a potential altemative for laser devices in this spectral range [I]. InAsN owns two important features, i. e., the band gap reduction due. to the huge bowing parameters induced by the large differenc'es in atomic sizes and electronegativities of N and As atoms [2] and the lattice-mismatch-reduction when it is grown on Inp substrates. Both features can extend the wavelength range of InAsNhGaAiQW andmake it a promising material for mid-infked applications.In addition, the superior-qualit); o f ~M substrates-over GaSb substrates and the mature growth and processing technologies on InP-related alloys also provide advantages for laser diodes based on

The growth of Ga(In)NAs/GaAs is investigated by a DC plasma-assisted MBE. The N incorporation, composition fluctuations and strain relaxation are characterized by x-ray diffraction measurements and the dynamical simulations. 6-GaN,As,,/GaAs superlattices and GaN,As,., alloys of good quality are obtained through optimizing the growth conditions. Rapid-thermal annealing can improve the quality of Ga(In)NAs/GaAs significantly.