Growth and characterization of GaPN by OMVPE

Wakahara, Akihiro; Furukawa, Yukio; Itoh, Shogo; Hatakenaka, Susumu; Yonezu, Hiroo

doi:10.1016/j.jcrysgro.2006.11.024

Cited by 9 publications

(11 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These degrade the optical and electrical properties of (In)GaPN alloys. Therefore, we tried to grow (In)GaPN alloy by organometallic vapor-phase epitaxy (OMVPE) [5,6]. This method is free from the N-plasma.…”

Section: Introductionmentioning

confidence: 99%

Doping control and evaluation of pn-junction LED in GaPN grown by OMVPE

Hatakenaka

Nakanishi

Wakahara

et al. 2008

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Doping control and evaluation of pn-junction LED in GaPN grown by OMVPE

Hatakenaka

Nakanishi

Wakahara

et al. 2008

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

“…Non-radiative center was also reduced as increasing the temperature. We reported that surface morphology and crystalline quality of GaPN were improved at the temperature higher than 620 °C [3]. The reduction of N compositional fluctuation can be seen in PL spectra (Fig.…”

Section: Methodsmentioning

confidence: 67%

“…It is well know that growth reaction in organometallic vapor phase epitaxy (OMVPE) is much closer to thermal equilibrium condition than the MBE. We reported that uniformity of N content could be improved in OMVPE compared with the MBE [3]. Gesiz et al reported that carbon and/or hydrogen unintentionally incorporated from or-ganometallic source in GaPN grown by OMVPE [4].…”

mentioning

confidence: 99%

Luminescence properties of GaPN layer grown by OMVPE

Hatakenaka¹,

Wakahara

Nakanishi

et al. 2008

Phys. Status Solidi (c)

View full text Add to dashboard Cite

The effect of carbon incorporation on luminescence properties of GaPN grown by organometallic vapor phase epitaxy (OMVPE) has been investigated. Trimethylgallium (TMGa) and trimethylgallium (TEGa) were used as Ga precursors. The carbon concentration of 1.1×1017cm–3 was obtained by using TEGa, whereas that of GaPN grown using TMGa was 4.0×1017cm–3. Non‐radiative recombination rate was also reduced to about 1/100 by using TEGa. Moreover, the spatial fluctuation of N content and Non‐radiative rate was reduced with increasing substrate temperature. Therefore, luminescence properties of GaPN could be improved by using TEGa at high substrate temperature. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

“…The compositional ratios depending on the growth temperature are shown on the Arrhenius plots in Figure S1a, Supporting Information. It could be assumed that the B incorporation process was governed by a thermally activated desorption process . The activation energy E a of B desorption was estimated to be 1.20 eV using y B = exp( E a / k B T ) fitted slope of the line connecting each data point.…”

Section: Resultsmentioning

confidence: 99%

Chemical Vapor Deposition of Boron‐Incorporated Graphitic Carbon Nitride Film for Carbon‐Based Wide Bandgap Semiconductor Materials

Urakami

Kosaka

Hashimoto

2019

Physica Status Solidi (b)

View full text Add to dashboard Cite

This article discusses the growth of B atoms incorporated into the graphitic carbon nitride (g-C 3 N 4 ) thin films on c-plane sapphire substrates at various growth temperatures by thermal chemical vapor deposition (CVD) using melamine and ammonia borane as precursors. The B incorporation is achieved at a growth temperature of 618 C, which is slightly higher than the optimal growth temperature of g-C 3 N 4 thin films. The signal peak for the B 1s core level attributed to B-N bonds is observed by X-ray photoelectron spectroscopy, indicating the realization of B incorporation into g-C 3 N 4 films. With an increase in the growth temperature up to 650 C, a monotonically increasing B composition and a decreasing C composition are observed, implying that B atoms are incorporated into g-C 3 N 4 by the substitution into C sites. A shift of photoluminescene (PL) peak energy is observed. The PL peak shifts from 2.75 eV for unintentionally doped thin film to 3.60 eV for B-incorporated thin films with a composition of 8.0%. The B composition dependence of PL peak energies is in good agreement with the quadratic function, suggesting that the bandgap bowing occurs due to B incorporation into the g-C 3 N 4 thin films as in conventional compound semiconductor alloys.

show abstract

Growth and characterization of GaPN by OMVPE

Cited by 9 publications

References 11 publications

Doping control and evaluation of pn-junction LED in GaPN grown by OMVPE

Doping control and evaluation of pn-junction LED in GaPN grown by OMVPE

Luminescence properties of GaPN layer grown by OMVPE

Chemical Vapor Deposition of Boron‐Incorporated Graphitic Carbon Nitride Film for Carbon‐Based Wide Bandgap Semiconductor Materials

Contact Info

Product

Resources

About