Doping control and evaluation of pn-junction LED in GaPN grown by OMVPE

Electrical and luminescence properties of Mg‐doped p‐type GaPN grown by molecular beam epitaxy

“…N atoms at N-related isoelectronic impurity levels trap the electrons, and these N atoms act as a Columb scattering centre for free electrons at RT [13]. Similar empirical results have been reported for S-doped n-type GaPN grown by metalorganic vapour phase epitaxy (MOVPE) [14] and the deep-traps due to S doping have been observed for n-type GaPN grown by MOVPE [15]. On the other hand, there has been no report about the acceptor concentration control and the electrical and luminescence characterizations for p-type GaPN grown by MBE.…”

Growth of a lattice-matched GaAsPN p–i–n junction on a Si substrate for monolithic III–V/Si tandem solar cells

“…4) This result shows the potential of GaP-based III-V-N alloys for solar cells. However, fundamental research on III-V-N alloys including GaAsPN has mainly focused on the low nitrogen composition range (<3%) [4][5][6][7][8] because of the large miscibility gap. Because the solubility of nitrogen in III-V compounds is extremely low at thermodynamic equilibrium, compositional fluctuations are unintentionally induced in the crystal, leading to crystallinity degradation.…”