Growth of a lattice-matched GaAsPN p–i–n junction on a Si substrate for monolithic III–V/Si tandem solar cells

Yamane, Keisuke; Goto, Minoru; Takahashi, Kenjiro; Sato, Kento; Sekiguchi, Hiroto; Okada, Hiroshi; Wakahara, Akihiro

doi:10.7567/apex.10.075504

Cited by 15 publications

(10 citation statements)

References 22 publications

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“…An important example of intermediate band HMA is the GaNPAs alloy in which P to As ratio can be tuned at will to change the band gap and modify the respective offsets between the conduction band edge and the localized N level energy making this alloy one of the most promising materials for IBSC applications 11–14 . The possibility of growing GaNPAs on Si substrates is a very important advantage of this alloy as it makes it feasible to co-integrate IBSC, multi-junctions solar cells 15 or laser emitters with Si technology. For these reasons As-rich GaNPAs alloys and quantum wells with a few percent of nitrogen atoms have been investigated very intensively in recent years 16,17 .…”

Section: Introductionmentioning

confidence: 99%

Nitrogen-related intermediate band in P-rich GaNxPyAs1−x−y alloys

Żelazna

Gładysiewicz

Polak

et al. 2017

Sci Rep

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The electronic band structure of phosphorus-rich GaNxPyAs1−x−y alloys (x ~ 0.025 and y ≥ 0.6) is studied experimentally using optical absorption, photomodulated transmission, contactless electroreflectance, and photoluminescence. It is shown that incorporation of a few percent of N atoms has a drastic effect on the electronic structure of the alloys. The change of the electronic band structure is very well described by the band anticrossing (BAC) model in which localized nitrogen states interact with the extended states of the conduction band of GaAsP host. The BAC interaction results in the formation of a narrow intermediate band (E− band in BAC model) with the minimum at the Γ point of the Brillouin zone resulting in a change of the nature of the fundamental band gap from indirect to direct. The splitting of the conduction band by the BAC interaction is further confirmed by a direct observation of the optical transitions to the E+ band using contactless electroreflectance spectroscopy.

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Section: Introductionmentioning

confidence: 99%

Nitrogen-related intermediate band in P-rich GaNxPyAs1−x−y alloys

Żelazna

Gładysiewicz

Polak

et al. 2017

Sci Rep

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“…Figure. 7 shows the Capacitance -Voltage (C-V) characteristics of as-grown and annealed diodes which will be used to determine the net acceptor concentration in the p -GaAsPN layer). The plot of 1/C 2 vs V is a straight line for both diodes indicating that the doping is uniform throughout the measured region of p -GaAsPN layer.…”

Section: Capacitance-voltage (C-v) Characteristics Of As-grown and Annealed Diodesmentioning

confidence: 99%

Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes

Alburaih¹,

Albalawi²,

Henini³

2019

Semicond. Sci. Technol.

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The effect of rapid thermal annealing on the electrical properties of p ++ GaP/p -GaAsPN/n + GaP diodes were investigated by using Current -Voltage (I-V), Capacitance-Voltage (C-V) and Deep Level Transient Spectroscopy (DLTS) techniques in the temperature range from 100K to 440K. It was observed that rapid thermal annealing treatment improves the electrical characteristics of as-grown structures. The annealed samples showed an ideality factor lower than the as-grown samples for all temperatures. The ideality factor values from I-V characteristics has changed between 6.8 and 1.9 in the temperature range of 110-430K for as grown diode, and between 6.3 and 1.44 in the temperature range 100-400K for the annealed diode. On the other hand, the barrier height increases and the ideality factor decreases with increasing temperature for all samples. The barrier height values has changed between 0.29 eV and 0.71eV in the temperature range of 190-430K for as grown diode, and between 0.38 eV and 0.77eV in the temperature range 180-420K for the annealed diode. High values of barrier heights were observed in the annealed samples due to the barrier height in-homogeneities at the p-i-n junction.The net acceptor concentration was calculated to be 1.18 x10 18 cm -3 and 2.11x10 18 cm -3 for the as-grown and annealed GaAsPN layers, respectively. The net acceptor concentration increases by ~56% and the leakage current of the GaAsPN/GaP p-i-n junction decreases by1-2 orders after RTA. DLTS and Laplace-DLTS measurements reveal three hole traps, H1an(0.06eV), H2an(0.065eV) and H3(0.23eV) in the annealed samples as compared with two hole traps, H4ag(0.07eV) and H5(0.25eV) in the as-grown samples. After rapid thermal annealing an extra shallow trap is created.

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“…7 However, so far there are only a few studies of solar cells based on (In)GaPN(As) lattice-matched to GaP or Si, and their photovoltaic performance is poor due to insufficient quality of the III-V layers. [8][9][10][11][12] First of all, the growth of dilute nitrides layers occurs in non-equilibrium conditions at low temperature, which is required for better nitrogen incorporation. Usually, it is less than 500°C, whereas the optimal growth temperature of GaAs and GaP is close to 600°C.…”

Section: Introductionmentioning

confidence: 99%