Growth and characterization of heterojunction bipolar transistor on GaAs (111)B substrate by molecular beam epitaxy

High-quality AlGaAs/GaAs heterostructures have been grown on on-axis (111)B GaAs substrates using molecular-beam epitaxy to study the effect of As4 pressure on the material qualities. It was found that the electrical and structural properties were strongly dependent on the As4 pressure. The quality of the heterostructure was investigated by Hall effect, atomic force microscopy, and high-resolution x-ray diffraction measurements. The electron Hall mobility dropped from 7200 and 90 000 cm2/V s to 930 and 1340 cm2/V s at room temperature and 77 K, respectively, as As4 pressure was increased from 4.9×10−6 to 1.1×10−7 Torr. The same trend was observed at the root-mean-square roughness of the AlGaAs/GaAs heterostructures measured by atomic force microscopy, and the intensity and full width at half-maximum of the x-ray diffraction curve.

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The effect of As4 pressure on material qualities of AlGaAs/GaAs heterostructures grown on (111)B GaAs substrates

Yeo

Dimitrov

Schaff

et al. 2000

Applied Physics Letters

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Material properties of bulk InGaAs and InAlAs/InGaAs heterostructures grown on (111)B and (111)B misoriented by 1° towards 〈211〉 InP substrates

Yeo

Dimitrov

Schaff

et al. 2000

Applied Physics Letters

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High-quality bulk InGaAs and InAlAs/InGaAs heterostructures have been grown on InP substrates with different orientation using molecular-beam epitaxy. It was found that the electrical and structural properties were strongly dependent on growth temperature and substrate misorientation. The electrical and structural properties of the film were investigated by high-resolution x-ray diffraction, Nomarski microscope, and Hall measurements. Full-width at half-maximum of 380 arcsec for bulk InGaAs on (111)B and 70 arcsec on (111)B misoriented by 1° towards 〈211〉 InP substrates were measured by x-ray diffraction. The room temperature electron Hall mobility for bulk InGaAs of 5100 cm2/V s, doped with Si concentration at the mid-1017/cm3, and two-dimensional electron gas mobility of 11 200 cm2/V s, and sheet density of 3.0×1012/cm2 for InAlAs/InGaAs heterostructures on (111)B misoriented by 1° towards 〈211〉 InP substrates were achieved.

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The design and application of electron cyclotron resonance discharges

Asmussen

Grotjohn

Mak

et al. 1997

IEEE Trans. Plasma Sci.

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Growth and characterization of heterojunction bipolar transistor on GaAs (111)B substrate by molecular beam epitaxy

Cited by 3 publications

References 22 publications

The effect of As4 pressure on material qualities of AlGaAs/GaAs heterostructures grown on (111)B GaAs substrates

The effect of As4 pressure on material qualities of AlGaAs/GaAs heterostructures grown on (111)B GaAs substrates

Material properties of bulk InGaAs and InAlAs/InGaAs heterostructures grown on (111)B and (111)B misoriented by 1° towards 〈211〉 InP substrates

The design and application of electron cyclotron resonance discharges

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