Growth and characterization of high quality CIGS films using novel precursors stacked and surface sulfurization process

Wu, Chia-Huang; Wu, Pu‐Wei; Hsiao, Ruey-Chang; Hsu, Chun-Yao

doi:10.1007/s10854-018-9235-5

Cited by 9 publications

(3 citation statements)

References 37 publications

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“…This phenomenon was caused by the high concentration of copper atoms present in the bimetal-ion solution. The distribution of selenium atoms is illustrated in figure 3(b); the depth profiles of selenium atoms in all samples were observed to be the same, regardless of whether a copper-indium back-end layer was present in the precursor films, which were the common distribution in the CIGS films [22][23][24]. As illustrated in figure 3(c), the distribution of gallium atoms exhibited a gradient profile from the backcontact region to the surface region in all samples.…”

Section: Effects Of Copper-indium Back-end Layers On the Phase Formatmentioning

confidence: 82%

Incorporation of copper–indium back-end layers in the solution-based Cu(In, Ga)Se₂ films: enhancement of photovoltaic performance of fabricated solar cells

Som

2020

Mater. Res. Express

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The morphology and photovoltaic properties of the solution-based Cu(In, Ga)Se 2 films are effectively improved via the incorporation of copper-indium back-end layers in the precursor films. The effects on the concentrations of bimetal-ions solutions to prepare copper-indium back-end layers are investigated in this study. The incorporation of copper-indium back-end layer in the precursor film enhances the internal diffusion between gallium-ions and indium-ions during selenization reaction. Hence, the porous structure in the back-contact region of prepared CIGS films becomes densified, and the bandgap distribution of films shows a gradient profile. The densified morphology and gradient bandgap reduce the carrier recombination and improve the carrier collection of solar cells. In contrast to the pristine precursor film, the precursor film with a copper-indium back-end layer increase the conversion efficiency of prepared solar cells from 8.34% to 11.13%. The enhancement of conversion efficiency is attributed to the improvement of short-circuit current density and fill factor from 25.70 mA cm −2 to 31.79 mA cm −2 and 57.65% to 65.70%, respectively. This study reveals that the photovoltaic properties of solution-based CIGS solar cells can be improved significantly via the incorporation of copper-indium back-end layers into the precursor films. OPEN ACCESS RECEIVED

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Section: Effects Of Copper-indium Back-end Layers On the Phase Formatmentioning

confidence: 82%

Incorporation of copper–indium back-end layers in the solution-based Cu(In, Ga)Se₂ films: enhancement of photovoltaic performance of fabricated solar cells

Som

2020

Mater. Res. Express

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“…The metallic precursor was post-selenized using a three-stage process. 14) The precursor was heated to 150 °C, then to 350 °C, and to 550 °C for 10 min. Chalcopyrite phase CIGS absorber layers are formed without that addition of Se during the post-selenization process.…”

Section: Methodsmentioning

confidence: 99%

Production of CIGS solar cell with an appropriate atomic ratio using magnetron sputtering

Tang¹,

Li²,

Lin³

et al. 2020

Jpn. J. Appl. Phys.

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A Cu (In, Ga)Se2 (CIGS) chalcopyrite-type structure solar cell is produced using magnetron sputtering with Cu0.75Ga0.25 and In targets, followed by a three-stage selenization process. A metallic precursor CuGa (maintained at ∼300 nm)/In (various indium film thickness) is used to study the process for the fabrication of a CIGS film. The sample that is selenized at 550 °C has a tetragonal chalcopyrite phase structure with main diffraction peaks (112) at 2θ ∼ 26.6° and other prominent peaks (220/204) and (312)/(116) crystal planes. A favorable atomic ratio for the CIGS films is achieved for respective ratios of [Ga/(In+Ga)] and [Cu/(In+Ga)] in the CIGS absorber layers of 0.28 and 0.99. These ratios are almost equal to the ratios for the respective precursor layer. The near-stoichiometric films are uniform and crack-free and have better crystalline quality and large surface grains. A CIGS heterojunction solar cell is synthesized and the photo-conversion efficiency is calculated.

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“…Various approaches have been explored to improve the quality of metal chalcogenide-based materials, encompassing precise control of chemical composition and crystal structure [25,26], advanced precursor utilization for thin film synthesis [27][28][29], the development of defect passivation layers [30,31], and the introduction of novel dopant materials into the absorber layer [32][33][34][35]. Among these dopants, antimony (Sb) has emerged as a promising candidate, exhibiting beneficial effects on metal chalcogenide properties, and leading to increased photovoltaic performance.…”

Section: Introductionmentioning

confidence: 99%

DFT insights into the effects of substitutionally doped Sb defects in CuIn(S,Se)₂ solar cell absorber

Mazalan,

Abd Aziz,

Saidina Amin

2023

Phys. Scr.

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Metal chalcogenide-based semiconductors are gaining attention for optoelectronic applications like thin-film photovoltaics (PV). Sb dopant incorporation in CuIn(S,Se)2 (CISSe) solar cell has been proven to significantly enhance PV performance, as demonstrated in our previous experimental work. However, the underlying mechanisms behind this improvement remained unclear. In this study, we report on the influence of substitutionally doped Sb defect on the structural, formation energy, band structure, and optical absorption properties in CISSe, employing the hybrid HSE06 functional within the density functional theory framework. We find that the Sb prefers to substitute at In site, resulting in the most stable Sb-doped CISSe structure. Under cation-poor growth conditions, Sb prefers to substitute on In sites, while under anion-poor growth conditions, it shows a preference for substituting on Se sites. Interestingly, only SbIn defects do not form impurity states in the band gap. Additionally, SbIn, SbS, and SbSe show a reduction in the band gap. Our results reveal that Sb-doped CISSe exhibits enhanced optical absorption in the IR to visible regions, leading to increased photocurrent generation and improved photovoltaic device efficiency, consistent with our experimental findings. These findings provide valuable theoretical insights into the influence of Sb-doping in CISSe, aiding the design of effective metal chalcogenide PV.

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Growth and characterization of high quality CIGS films using novel precursors stacked and surface sulfurization process

Cited by 9 publications

References 37 publications

Incorporation of copper–indium back-end layers in the solution-based Cu(In, Ga)Se₂ films: enhancement of photovoltaic performance of fabricated solar cells

Incorporation of copper–indium back-end layers in the solution-based Cu(In, Ga)Se₂ films: enhancement of photovoltaic performance of fabricated solar cells

Production of CIGS solar cell with an appropriate atomic ratio using magnetron sputtering

DFT insights into the effects of substitutionally doped Sb defects in CuIn(S,Se)₂ solar cell absorber

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Growth and characterization of high quality CIGS films using novel precursors stacked and surface sulfurization process

Cited by 9 publications

References 37 publications

Incorporation of copper–indium back-end layers in the solution-based Cu(In, Ga)Se2 films: enhancement of photovoltaic performance of fabricated solar cells

Incorporation of copper–indium back-end layers in the solution-based Cu(In, Ga)Se2 films: enhancement of photovoltaic performance of fabricated solar cells

Production of CIGS solar cell with an appropriate atomic ratio using magnetron sputtering

DFT insights into the effects of substitutionally doped Sb defects in CuIn(S,Se)2 solar cell absorber

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Incorporation of copper–indium back-end layers in the solution-based Cu(In, Ga)Se₂ films: enhancement of photovoltaic performance of fabricated solar cells

Incorporation of copper–indium back-end layers in the solution-based Cu(In, Ga)Se₂ films: enhancement of photovoltaic performance of fabricated solar cells

DFT insights into the effects of substitutionally doped Sb defects in CuIn(S,Se)₂ solar cell absorber