Growth and characterization of InAs quantum dots on InP nanowires with zinc blende structure

Yan, Xin; Zhang, Xia; Li, Junshuai; Cui, Jiangong; Wang, Sijia; Fan, Shuyu; Huang, Yongqing; Ren, Xiaomin

doi:10.1116/1.4818509

Cited by 2 publications

(1 citation statement)

References 25 publications

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“…The WZ facet has a lower surface energy compared with ZB and is unfavorable for the formation of QDs . While on WZ/ZB facet, non Stranski–Krastanov (S–K) InAs dot‐like structures are randomly formed, with high‐density stacking faults and a broad emission linewidth .…”

Section: Introductionmentioning

confidence: 99%

Fabrication and optical properties of type‐II InP/InAs nanowire/quantum‐dot heterostructures

Yan

Zhang

et al. 2015

Physica Rapid Research Ltrs

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The growth and optical properties of InAs quantum dots on a pure zinc blende InP nanowire are investigated. The quantum dots are formed in Stranski–Krastanov mode and exhibit pure zinc blende crystal structure. A substantial blueshift of the dots peak with a cube‐root dependence on the excitation power is observed, suggesting a type‐II band alignment. The peak position of dots initially red‐shifts and then blue‐shifts with increasing temperature, which is attributed to the carrier redistribution among the quantum dots. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 99%

Fabrication and optical properties of type‐II InP/InAs nanowire/quantum‐dot heterostructures

Yan

Zhang

et al. 2015

Physica Rapid Research Ltrs

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Controllable growth and optical properties of InP and InP/InAs nanostructures on the sidewalls of GaAs nanowires

Yan

Zhang

et al. 2014

Journal of Applied Physics

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The growth and optical properties of InP and InP/InAs nanostructures on GaAs nanowires are investigated. InP quantum well and quantum dots (QDs) are formed on the sidewalls of GaAs nanowires successively with increasing the deposition time of InP. The GaAs/InP nanowire heterostructure exhibits a type-II band alignment. The wavelength of the InP quantum well is in the range of 857–892 nm at 77 K, which means that the quantum well is nearly fully strained. The InP quantum dot, which has a bow-shaped cross section, exhibits dislocation-free pure zinc blende structure. Stranski-Krastanow InAs quantum dots are subsequently formed on the GaAs/InP nanowire core-shell structure. The InAs quantum dots are distributed over the middle part of the nanowire, indicating that the In atoms contributing to the quantum dots mainly come from the vapor rather than the substrate. The longest emission wavelength obtained from the InAs QDs is 1039 nm at 77 K. The linewidth is as narrow as 46.3 meV, which is much narrower than those on planar InP substrates and wurtzite InP nanowires, suggesting high-crystal-quality, phase-purity, and size-uniformity of quantum dots.

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Growth and characterization of InAs quantum dots on InP nanowires with zinc blende structure

Cited by 2 publications

References 25 publications

Fabrication and optical properties of type‐II InP/InAs nanowire/quantum‐dot heterostructures

Fabrication and optical properties of type‐II InP/InAs nanowire/quantum‐dot heterostructures

Controllable growth and optical properties of InP and InP/InAs nanostructures on the sidewalls of GaAs nanowires

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