Growth and characterization of InAs on (100) InP ultrathin single quantum wells using tertiarybutylarsine and tertiarybutylphosphine

Abstract

Articles you may be interested inIn situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metalorganic vapor phase epitaxy Ultrathin InAs/InP single quantum wells were grown by low-pressure metalorganic vapor phase epitaxy using tertiarybutylphosphine and tertiarybutylarsine, with nominal thicknesses between 2 and 3 ML. Characterization of a large number of samples by high-resolution x-ray diffraction ͑HR-XRD͒ and photoluminescence ͑PL͒ indicates an average InAs thickness very close to the nominal one. Photoluminescence excitation and absorption spectra of selected samples contain excitonic resonances associated with electron-hole transitions in 2 or 3 ML of InAs buried in InP. Only one set of these resonances appears in a given sample, thereby corroborating HR-XRD and PL measurements. Thus, our measurements indicate an absence of significant As-P intermixing.

Optical emission from InAs/InP self-assembled quantum dots: evidence for As/P intermixing

“…The first group, with d emission and the PLE resonances that corresponds to the halfwidth at half-maximum of the emission. The PLE resonances are grouped in narrow ranges of energy that correspond well to what was previously published for other samples grown under different conditions [27,28]. As explained in [28], they are representative of the exciton ground-state energy of QWs with an integer number of MLs.…”

“…The average thicknesses d XRD of the InAs layers, determined by simulating high-resolution x-ray diffraction (XRD) scans under the assumption that the InAs layers are pseudomorphic with the InP substrates [27], are given in table 2.…”

Carrier thermal escape in families of InAs/InP self-assembled quantum dots

“…The growth interruption sequence used to switch from InP to InAs and back is described in Ref. 22. In particular, a 4 s growth interruption was applied after InAs deposition.…”