Growth and characterization of InAs quantum dots on Si(001) substrates

Zhao, Zhexin; Hulko, O.; Kim, H.J.; Liu, J.; Sugahari, T.; Shi, Bin; Xie, Ya‐Hong

doi:10.1016/j.jcrysgro.2004.08.013

Cited by 13 publications

(7 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A vast literature exists on the formation of InAs quantum dots on Si and GaAs, some of the studies including the critical growth parameters on the morphology [55][56][57][58][59][60][61]. For substrate temperatures above 480 • C, one observes that the quantum dot size increases with the temperature, with a scaling law similar to what we measure for the width of the membranes [60,61].…”

Section: Temperature Dependencesupporting

confidence: 64%

Growth mechanisms and process window for InAs V-shaped nanoscale membranes on Si[001]

Russo-Averchi¹,

Dalmau-Mallorquí²,

Canales-Mundet³

et al. 2013

Nanotechnology

View full text Add to dashboard Cite

Organized growth of high aspect-ratio nanostructures such as membranes is interesting for opto-electronic and energy harvesting applications. Recently, we reported a new form of InAs nano-membranes grown on Si substrates with enhanced light scattering properties. In this paper we study how to tune the morphology of the membranes by changing the growth conditions. We examine the role of the V/III ratio, substrate temperature, mask opening size and inter-hole distances in determining the size and shape of the structures. Our results show that the nano-membranes form by a combination of the growth mechanisms of nanowires and the Stranski-Krastanov type of quantum dots: in analogy with nanowires, the length of the membranes strongly depends on the growth temperature and the V/III ratio; the inter-hole distance of the sample determines two different growth regimes: competitive growth for small distances and an independent regime for larger distances. Conversely, and similarly to quantum dots, the width of the nano-membranes increases with the growth temperature and does not exhibit dependence on the V/III ratio. These results constitute an important step towards achieving rational design of high aspect-ratio nanostructures.

show abstract

Section: Temperature Dependencesupporting

confidence: 64%

Growth mechanisms and process window for InAs V-shaped nanoscale membranes on Si[001]

Russo-Averchi¹,

Dalmau-Mallorquí²,

Canales-Mundet³

et al. 2013

Nanotechnology

View full text Add to dashboard Cite

show abstract

“…The AFM profiles show that site‐selective formation of GaAs is maintained at V/III ratios of 10 and 20, whereas additional nucleation of islands between the holes is observed at a low V/III ratio of 5 with a density of 1 × 10 10 cm −2 . The increase in nucleation density of islands with decreasing V/III ratio has also been observed previously in the case of InAs QDs growth on silicon , where it was suggested that the Si–In bond is the limiting factor of InAs QDs nucleation and that for lower As pressure (low V/III ratio) the silicon surface atoms are not completely passivated with SiAs bonds and As vacancies are then occupied by In atoms forming SiIn bonds and hence additional nucleation centers with decreasing As flux. The same arguments can also be extended to explain the observed high density of GaAs island nucleation between the holes (Fig.…”

Section: Resultssupporting

confidence: 79%

Site-controlled growth of GaAs nanoislands on pre-patterned silicon substrates

Usman

Reithmaier

Benyoucef

2014

Phys. Status Solidi A

View full text Add to dashboard Cite

GaAs islands have been grown by molecular beam epitaxy on Si (100) substrates patterned with nanoscale holes using only few monolayer deposition thicknesses. The site‐controlled growth has been achieved without masking the Si surface with SiO2 between the patterned holes. The nucleation density of GaAs islands between the patterned holes shows a strong dependence on the growth temperature, V/III beam flux ratio and nominal deposition thickness. Through the selection of optimal growth parameters GaAs islands have been grown highly selectively in the patterned holes over a wide range of hole diameters for fixed spacing as well as over a wide range of spacings for fixed diameter of the holes. The influence of pattern features (hole diameter, spacing) on the morphological properties of the site‐controlled GaAs islands has been investigated in detail. A (5 × 5) μm2 AFM image of GaAs nanoislands selectively grown in patterned holes with 70 nm diameter and a spacing of 0.5 μm on Si substrate.

show abstract

“…Therefore, the island formation process cannot be explained any longer by a Stranski–Krastanov growth mode. Such phenomenon was already observed, where the formation of QDs takes place by using less than 0.3 ML coverage, which indicates in contrast to previous experiments a transition to a Volmer–Weber growth mode without the formation of a continuous wetting layer . In the following, we will discuss the initial stage of the formation of InAs QDs on silicon surfaces and the embedding process of InAs QDs in a silicon matrix using detailed studies of their structural properties by HR‐TEM investigations.…”

Section: Resultsmentioning

confidence: 80%

Nanostructured hybrid material based on highly mismatched III–V nanocrystals fully embedded in silicon

Benyoucef

AlZoubi

Reithmaier

et al. 2013

Physica Status Solidi (a)

View full text Add to dashboard Cite

InAs quantum dots were directly grown on (100) planar silicon surfaces and embedded in a defect‐free silicon matrix after a multi‐step silicon overgrowth and annealing process performed by molecular beam epitaxy. Detailed high‐resolution transmission electron microscope investigations allow to follow within several steps the formation process of nearly fully relaxed InAs nanocrystals embedded in a defect‐free and planar silicon layer. The lattice mismatch between InAs and Si is almost fully accommodated by closed misfit dislocation loops at the III–V silicon interface, which suppresses the generation of threading dislocations in the embedding silicon matrix. InAs QDs embedded in defect‐free silicon.

show abstract

Growth and characterization of InAs quantum dots on Si(001) substrates

Cited by 13 publications

References 14 publications

Growth mechanisms and process window for InAs V-shaped nanoscale membranes on Si[001]

Growth mechanisms and process window for InAs V-shaped nanoscale membranes on Si[001]

Site-controlled growth of GaAs nanoislands on pre-patterned silicon substrates

Nanostructured hybrid material based on highly mismatched III–V nanocrystals fully embedded in silicon

Contact Info

Product

Resources

About