Growth and characterization of InAsN alloy films and quantum wells

Kuroda, Masayuki; Nishikawa, Atsushi; Katayama, Ryuji; Onabe, Kentaro

doi:10.1016/j.jcrysgro.2005.01.075

Cited by 31 publications

(28 citation statements)

References 10 publications

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“…8 Therefore, the nitrogen-induced band gap reduction in InNAs can generally only be estimated from absorption spectroscopy once the contribution of Moss-Burstein shift to the position of the absorption edge has been modeled. [7][8][9] In this letter, the temperature dependence of photoluminescence ͑PL͒ from dilute InNAs films grown by MBE is reported. The PL spectra unambiguously show band gap reduction with increasing N content.…”

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confidence: 94%

“…3,4 While a great deal of attention has been paid to GaNAs and GaInNAs alloys for nearinfrared applications, the investigation of related dilute nitride alloys, such as GaNSb ͑Ref. 5͒ and InNAs, [6][7][8][9] for midinfrared applications is only in its infancy. Indeed, band gap reduction has proved difficult to observe unambiguously in absorption spectra from InNAs alloys.…”

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confidence: 99%

“…Indeed, band gap reduction has proved difficult to observe unambiguously in absorption spectra from InNAs alloys. [7][8][9] The reduction of the absorption-edge energy with increasing nitrogen content has so far only been observed in one optical absorption study of InNAs alloys. 6 Generally, absorption edges at higher energies than the true band gap are observed in n-type InNAs epilayers.…”

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confidence: 99%

“…6 Generally, absorption edges at higher energies than the true band gap are observed in n-type InNAs epilayers. [7][8][9] This is due to the Moss-Burstein effect, 10,11 resulting from band filling due to unintentionally degenerate n-type doping in the InNAs alloy. This proclivity of InAs and InNAs for n-type conductivity is consistent with the amphoteric defect model.…”

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confidence: 99%

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Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys

Veal

Piper

Jefferson

et al. 2005

Applied Physics Letters

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Photoluminescence ͑PL͒ has been observed from dilute InN x As 1−x epilayers grown by molecular-beam epitaxy. The PL spectra unambiguously show band gap reduction with increasing N content. The variation of the PL spectra with temperature is indicative of carrier detrapping from localized to extended states as the temperature is increased. The redshift of the free exciton PL peak with increasing N content and temperature is reproduced by the band anticrossing model, implemented via a ͑5 ϫ 5͒ k·p Hamiltonian.

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confidence: 94%

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confidence: 99%

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confidence: 99%

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confidence: 99%

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Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys

Veal

Piper

Jefferson

et al. 2005

Applied Physics Letters

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“…5,9,[11][12][13]18 The results are usually analyzed in terms of the BAC model, which allows one to calculate the fundamental band gap energy of InAs 1−x N x ͑i.e., the energy of the E − subband͒ as a function of composition…”

Section: Pl and Optical Absorptionmentioning

confidence: 99%

Structural and optical properties of dilute InAsN grown by molecular beam epitaxy

Ibáñez

Oliva

Mare

et al. 2010

Journal of Applied Physics

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We perform a structural and optical characterization of InAs 1−x N x epilayers grown by molecular beam epitaxy on InAs substrates ͑x Շ 2.2%͒. High-resolution x-ray diffraction ͑HRXRD͒ is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy ͑ToF-SIMS͒ measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard's law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing ͑BAC͒ model. We find that the room-temperature coupling parameter for InAsN within the BAC model is C NM = 2.0Ϯ 0.1 eV.

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Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots

Taliercio

Valvin

Intartaglia

et al. 2005

Physica Status Solidi (a)

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We present a study of the optical properties of quantum dots based on a new family of semiconductors: III–V dilute nitrides such as (In,Ga)(N,As). Continuous wave and time resolved photoluminescence (PL) experiments allowed us to evaluate the impact of N incorporation during the growth of InAs/GaAs quantum dots. Previous work [V. Sallet et al., to be submitted to J. Cryst. Growth (2005); O. Schumann et al., J. Appl. Phys. 96, 2832 (2004)] showed that increasing the flux of N atoms into the growth chamber modifies drastically the size of the dots which leads to a bimodal growth. Two populations of dots with different sizes appear. The quantum dot PL line broadens and a second PL line appears at higher energy. Time resolved PL allows us to identify the nature of this second PL line: second population of quantum dots. A second decay time is observed which we interpret as being the consequence of the perturbation of the electronic states of the quantum dots. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Growth and characterization of InAsN alloy films and quantum wells

Cited by 31 publications

References 10 publications

Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys

Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys

Structural and optical properties of dilute InAsN grown by molecular beam epitaxy

Continuous wave and time resolved spectroscopy of InAsN/GaAsN based quantum dots

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