Growth and characterization of InN layers by metal-organic vapour phase epitaxy in a close-coupled showerhead reactor

Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77eV) InN grown on GaN/sapphire using pulsed MOVPE

“…However, these are very preliminary results and further studies are still required to fully investigate and understand the mechanism of surface morphology improvement as a result of this technique. Table 1 represents the comparison data for the PL and Hall measurements of MOVPE-grown InN films as reported by various groups [7,11,12,[16][17][18][19]21]. Our results show good agreement with the comparison data in Table 1, which indicate the band gap of MOVPE-grown InN is $0.7-0.8 eV.…”

“…However, due to the required low growth temperature and lack of suitable lattice-matched substrates, the growth procedure of high-quality single crystalline InN films is still challenging, in particular by metalorganic vapor phase epitaxy (MOVPE). Different methods [7][8][9][10][11][12][13][14][15][16][17][18][19] have been developed to grow InN films and the quality of InN films has significantly improved [7][8][9][10][11][12][13][14][15][16][17][18][19]. Commonly, high V/III ratios of input precursors are employed to achieve the droplet-free InN films [13][14][15].…”

“…Commonly, high V/III ratios of input precursors are employed to achieve the droplet-free InN films [13][14][15]. In order to increase the growth rate as well as to avoid large consumption of group V source, efforts have been made, and growths under comparatively low V/III ratios have also been reported [16][17][18]. However, the droplet-free growth of InN under low V/III ratios is not common to all MOVPE reactor geometries.…”

Dependence of InN properties on MOCVD growth parameters

“…The values of the high-pressure samples are the best published so far for MOCVD-grown InN. We assume that high growth pressure prevents In surface segregation which happens mainly due to the weak In-N bond and the low vapour pressure of InN under N 2 [9]. Accompanying the decrement of FWHM of symmetric reflexes, the FWHM values of asymmetric reflexes of (10-12) are increasing from 2000 to 2800 arcsec with increasing pressure.…”

MOVPE growth and characterization of InN/GaN single and multi-quantum well structures

“…We have earlier reported on the optimization of InN epilayers in a showerhead reactor [11]. Using these optimized parameters for the InN layer (temperature=530 1C, reactor pressure=500 Torr, V/III ratio=10,190) a series of GaN/InN/GaN QW samples were grown where the number and thickness of the InN QWs and the temperature of the GaN cap were varied.…”