Growth and characterization of millimeter-sized GaN crystals by carbothermal reduction and nitridation of Ga2O3

Miura, Akira; Shimada, Shiro; Sekiguchi, Takashi

doi:10.1016/j.jcrysgro.2006.10.263

Cited by 18 publications

(13 citation statements)

References 28 publications

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“…This phenomenon seems to occur for the following reason: oxygen generated from the corroded ceramic balls or the tube transported the Ga element while forming Ga 2 O or Ga 2 O 3 , which have a higher equilibrium pressure than that of elemental Ga. Some researchers had successfully grown GaN crystals using Ga 2 O or Ga 2 O 3 as the Ga source [14,15].…”

Section: Contributed Articlementioning

confidence: 99%

Increase in the growth rate of GaN single crystals grown by gallium hydride vapor phase epitaxy method

Imade¹,

Yamada

Kitano

et al. 2008

Phys. Status Solidi (c)

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A dependence of Gallium hydride (GaHx: x = 1, 2, 3) production on the growth rate of GaN crystals grown by the gallium hydride vapor phase epitaxy (GaH‐VPE) method was investigated. By this method, GaN crystals are synthesized in a reaction between GaHx and NH3. The growth rate of GaN crystals has been as low as 20 μm/h at a maximum because the poor reactivity of H2 gas with Ga metal limits the production of GaHx. In this study, the interfacial area between Ga metal and H2 gas was enlarged to increase the GaHx synthesis, which thereby enabled an increase in the growth rate to 68 μm/h. We showed clearly that the growth rate of GaN by the GaH‐VPE method is limited by the efficiency of the reaction between the Ga metal and H2 gas. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Contributed Articlementioning

confidence: 99%

Increase in the growth rate of GaN single crystals grown by gallium hydride vapor phase epitaxy method

Imade¹,

Yamada

Kitano

et al. 2008

Phys. Status Solidi (c)

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“…Some researchers have reported growing GaN crystals using the reaction between Ga 2 O vapor and NH 3 [9][10][11][12]. This method produces no solid by-products, and therefore is, in principle, a simple technique that would allow the prolonged growth of GaN crystals.…”

Section: Introductionmentioning

confidence: 99%

Growth of GaN films with low oxygen concentration using Ga2O vapor and NH3

Bu¹,

Imade²,

Kishimoto³

et al. 2011

Journal of Crystal Growth

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“…From the direct reaction of Ga vapour with ammonia, only sub-millimeter crystallites were grown [4,5]. The so-called carbothermal reduction and nitridation of Ga 2 O 3 [6,7] utilises the volatility of Ga 2 O, but suffers from oxygen and carbon contamination.…”

Section: Introductionmentioning

confidence: 99%