Growth of GaN crystals from chlorine-free gas phase

Siche, D.; Rost, H.-J.; Böttcher, K.; Gogova, D.; Fornari, R.

doi:10.1016/j.jcrysgro.2007.11.135

Cited by 12 publications

(6 citation statements)

References 12 publications

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“…Our studies on the growth of GaN crystals by the direct synthesis from elemental Ga and ammonia [15,16] essentially provided identical results. However, further observations lead us to suppose that the overall reaction (3) is not the only one, maybe even not the dominating one under certain circumstances.…”

Section: Article In Presssupporting

confidence: 60%

Pseudohalide vapour growth of thick GaN layers

Jacobs

Siche

Klimm

et al. 2010

Journal of Crystal Growth

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Section: Article In Presssupporting

confidence: 60%

Pseudohalide vapour growth of thick GaN layers

Jacobs

Siche

Klimm

et al. 2010

Journal of Crystal Growth

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“…Additionally, HCN also promoted the GaN crust formation at a source temperature up to T s =1400°C, which decreased the growth rate with time. By coating more reactor components, the carbon content in the vapour was reduced in comparison to the experiments published in a former paper [12] and coalesced layers could be grown. There were however many C inclusions visible (see Fig.…”

Section: Methodsmentioning

confidence: 82%

The role of carbon in transport processes during PVT growth of bulk GaN

Rost

Siche

Gogova

et al. 2009

Phys. Status Solidi (c)

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Thick GaN layers were deposited by the reaction of gallium with ammonia. The Physical Vapour Transport (PVT) process with NH3 addition is characterized by moderate NH3 flow rates, pressures, and consumption of reactants, by reduced parasitic growth and no NH4Cl formation. Carbon addition to the ammonia results in growth of thicker layers at increased transport rate and in single crystals even at Ga super saturations, which would normally be too high for single crystalline growth. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…GaN layers are grown by Cl-free physical vapour transport (see for details [4,5]) an alternative of the wellestablished HVPE method [6,7]. Prior to PVT growth an amorphous carbon layer was in-situ deposited on a MOCVD-(0001) GaN/(0001) sapphire template.…”

Section: Methodsmentioning

confidence: 99%

Microscopic lateral overgrowth by physical vapour transport of GaN on self‐organized diamond‐like carbon masks

Gogova

Albrecht

Remmele

et al. 2009

Cryst. Res. Technol.

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Techniques to reduce dislocation densities in GaN grown on foreign substrates are an interesting alternative to bulk growth as long as efficient bulk crystals growth techniques are not available. In this paper a new approach for epitaxial lateral overgrowth (ELO) of GaN through an in-situ grown self-organized amorphous (diamond-like) carbon mask is demonstrated. The ELO was done for the first time by physical vapour transport of Ga, using NH 3 as a nitrogen source. The overgrowth results in a decrease of the threading dislocation density by at least one order of magnitude compared to that of the MOCVD GaN/sapphire templates. Dedicated to Prof. Wolfgang Neumann on the occasion of his 65th birthday

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Growth of GaN crystals from chlorine-free gas phase

Cited by 12 publications

References 12 publications

Pseudohalide vapour growth of thick GaN layers

Pseudohalide vapour growth of thick GaN layers

The role of carbon in transport processes during PVT growth of bulk GaN

Microscopic lateral overgrowth by physical vapour transport of GaN on self‐organized diamond‐like carbon masks

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