Pseudohalide vapour growth of thick GaN layers

Jacobs, K.; Siche, D.; Klimm, D.; Rost, H.-J.; Gogova, D.

doi:10.1016/j.jcrysgro.2009.12.055

Cited by 10 publications

(23 citation statements)

References 21 publications

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“…At high temperatures ammonia attacks the carboncontaining parts inside the growth reactor. On the basis of thermodynamic computations [2] we suggest the formation www.pss-c.com…”

Section: Experimental 21 Growth Equipment and Materialsmentioning

confidence: 95%

“…(The latter provides carbon dopant and ensures GaN:C growth): The detailed thermodynamical analysis of the chemical reactions involved in this "pseudohalide vapour phase epitaxy" of GaN:C can be found elsewhere [2]. The thicknesses of the GaN:C layers obtained in different growth experiments were in the range from 10 to 100 μm and the growth rate about 10 µm/h.…”

Section: Experimental 21 Growth Equipment and Materialsmentioning

confidence: 99%

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A new approach to grow C‐doped GaN thick epitaxial layers

Gogova

Rudko

Siche

et al. 2011

Phys. Status Solidi C

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In this study we employ a new method for growth of carbon‐doped wurtzite crystalline GaN (GaN:C) based on vapour phase transport of Ga by the pseudohalide hydrogen cyanide HCN. GaN:C layers with a thicknesses from 10 to 100 μm and up to 19 mm in size were grown from gallium melt and ammonia as feeding materials in a carbon‐containing equipment. The properties of the GaN:C layers were characterized by low‐temperature photoluminescence (LTPL), High‐Resolution X‐ray Diffraction (HRXRD), Secondary Ion Mass Spectrometry (SIMS) and room‐temperature Hall effect and Raman spectroscopy measurements. HRXRD studies demonstrated good crystalline quality of the thick GaN layers (the Rocking curve FWHMs are 570 arcsec for the (0004) reflection and 561 arcsec for the (10‐14) reflection for 10 μm thick samples). The LTPL and Raman spectroscopy confirmed the good optical and structural quality of the material. The carbon concentration measured by SIMS was 6x1018 cm‐3, however, the room‐temperature Hall effect experiments showed n‐type conductivity. Carbon acceptor incorporation into GaN (from the transport agent) as well as the reason of its electrical overcompensation by unintentional impurities like oxygen and silicon is discussed. Ways of technological process improvement are proposed. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…At high temperatures ammonia attacks the carboncontaining parts inside the growth reactor. On the basis of thermodynamic computations [2] we suggest the formation www.pss-c.com…”

Section: Experimental 21 Growth Equipment and Materialsmentioning

confidence: 95%

Section: Experimental 21 Growth Equipment and Materialsmentioning

confidence: 99%

A new approach to grow C‐doped GaN thick epitaxial layers

Gogova

Rudko

Siche

et al. 2011

Phys. Status Solidi C

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“…1c and d, respectively). Experiments with higher carbon concentration resulted in growth rates up to 60 mm/h, but the layer quality was strongly degraded [12]. Without carbon and rising T s to more than 1400 1C only polycrystalline growth could be observed.…”

Section: Ammonia-based Vapour Growthmentioning

confidence: 98%

“…In this context the ''pseudo-halide vapour phase epitaxy'' (PVPE) process was found to be a new method. The basics of this process and the growth reactor geometry were published in [12]. The pseudohalide hydrogencyanide (HCN) acts as a transport agent for Ga, forming volatile Ga(CN) g .…”

Section: Ammonia-based Vapour Growthmentioning

confidence: 99%

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PVT growth of GaN bulk crystals

Siche

Gogova

Lehmann

et al. 2011

Journal of Crystal Growth

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Carbon doped GaN layers grown by Pseudo‐Halide Vapour Phase Epitaxy

Siche

Zwierz

Kachel

et al. 2017

Crystal Research and Technology

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Pseudo-Halide Vapour Phase Epitaxy (PHVPE) was utilized to grow thick carbon doped GaN layers to study their suitability as semi-insulating (SI) substrates. With in-situ waste gas analysis by FTIR spectroscopy, the carbon doping from the HCN precursor gas was indirectly controlled in a wide range up to 5 × 10 19 cm -3 . The grown layers were characterized by Scanning Electron Microscopy (SEM), Secondary Ion Mass Spectroscopy (SIMS), Photoluminescence (PL), Micro-Raman-Spectroscopy, Hall effect measurement, and High Resolution X-Ray Diffractometry (HRXRD). Similar to the impurity incorporation (O, Si, Mg and Zn), carbon distribution proved to be inhomogeneous, due to its increased incorporation on facets of so-called V-pits.

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Pseudohalide vapour growth of thick GaN layers

Cited by 10 publications

References 21 publications

A new approach to grow C‐doped GaN thick epitaxial layers

A new approach to grow C‐doped GaN thick epitaxial layers

PVT growth of GaN bulk crystals

Carbon doped GaN layers grown by Pseudo‐Halide Vapour Phase Epitaxy

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