Growth and characterization of optically confined particulate films of anatase TiO2

Prakash, T.; Paramasivan, Chandrasekar

doi:10.1186/2228-5326-2-34

Cited by 9 publications

(1 citation statement)

References 14 publications

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“…Effective density of states in the conduction band (N C ) and that in the valance band (N V ) were calculated considering the effective mass of electron (m * e ) and hole (m * h ) for the nanocrystalline anatase TiO 2 (m * e =10m 0 and m * h =0.8m 0 ) [8], Effective density of states of electrons in the conduction band, (N C =2[2πm * e kT)/h 2 ) 3/2 ]) and the same for holes in valance band (N V =2[2πm * h kT)/h 2 ) 3/2 ]) were calculated to be, 7.93×10 20 cm −3 and 1.79×10 19 cm −3 , respectively. The detailed energy band diagram of the device is shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

Hybrid Fabrication of Highly Rectifying <inline-formula> <tex-math notation="LaTeX">$p$ </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">$n$ </tex-math></inline-formula> Homojunction Based on Nanostructured TiO<sub>2</sub>

Hazra

Chattopadhyay

Bhattacharyya

2015

IEEE Electron Device Lett.

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Present report concerns fabrication of nanostructured TiO 2 -based p-n homojunction, by the hybrid technique involving deposition of sol-gel grown not intentionally doped p-type TiO 2 nanoparticle layer over the electrochemically grown aligned, n-type TiO 2 nanotube array. The Au/ p-TiO 2 / n-TiO 2 nanotube/Ti device was found to offer the ideality factor and the cut-in voltage of ∼4 and ∼1.2 V, respectively, in the temperature range of 30°C-80°C. The structural advantages of TiO 2 nanotubes, owing to the large junction area, eventually offered attractive rectifying behavior (∼10 3 orders) of the fabricated junction.Index Terms-Sol-gel p-TiO 2 , electrochemical n-TiO 2 nanotubes, p-n homojunction, high rectification, low ideality factor.

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Section: Methodsmentioning

confidence: 99%