Growth and characterization of polar and nonpolar ZnO film grown on sapphire substrates by using atomic layer deposition

Son, Hyo-Soo; Choi, Nak-Jung; Kim, Jihoon; Lee, Sung‐Nam

doi:10.1016/j.tsf.2013.03.071

Cited by 22 publications

(14 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…ZnO:Al and ZnO:Ga thin films have been produced by a wide variety of techniques, including chemical and physical processes, such as pulsed laser deposition 6 , chemical vapor deposition 7 , spray pyrolysis 8 , sol-gel technique 9 , atomic layer deposition 10 and magnetron sputtering 11 onto a variety of substrates. Among these methods, magnetron sputtering is especially interesting, because it can not only be conducted at low temperatures, but can also produce high-quality crystalline intrinsic and doped ZnO thin films 12 .…”

Section: Introductionmentioning

confidence: 99%

Morphological and electrical evolution of ZnO: Al thin filmsdeposited by RF magnetron sputtering onto glass substrates

et al. 2014

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Morphological and electrical evolution of ZnO: Al thin filmsdeposited by RF magnetron sputtering onto glass substrates

et al. 2014

View full text Add to dashboard Cite

“…In addition, we observed that the size of the surface grains in the ALD-ZnO film was larger than in the RF sputtering-ZnO film due to plasma damage. Compared to RF magnetron sputtering, we suggest that ALD should be significantly more effective for achieving highquality nonpolar (10-10) ZnO film as a TCO material, which could improve optical output power of semipolar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) GaN-based LEDs in our experimental region.…”

Section: Discussionmentioning

confidence: 92%

“…We investigated the EL of semipolar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) GaNbased LEDs with nonpolar (10-10) ALD-ZnO and RF sputtering-ZnO films as a transparent conducting oxide. Figure 4 shows the light output power of both LEDs as functions of the injection current.…”

Section: Resultsmentioning

confidence: 99%

“…The growth sequence (1 cycle) of the ZnO film was DEZn feed -N 2 purge -H 2 O feed -N 2 purge. The exposure times for DEZn and H 2 O were fixed at 1.0 s, and the N 2 purging flow rate and time were 1600 sccm and 5 sec, respectively [16]. The growth temperature of the ZnO film was 250 • C. In the ZnO growth using RF magnetron-sputtering, 250nm-thick ZnO films were grown by using a ZnO (99.99%) target under an argon ambient.…”

Section: Methodsmentioning

confidence: 99%

“…For the PL measurements, the 266 nm line of a diode-pumped solid state laser was focused with a beam diameter of 20 μm and an excitation power of 1.0 kW/cm 2 on all samples. In addition, we investigated the electroluminescence (EL) of standard semipolar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) GaN-based LEDs with ALD-ZnO and RF-ZnO films as TCOs. Figure 1 shows XRD ω/2θ scans of ZnO films grown on m-plane sapphire substrates by using ALD and RF magnetron sputtering.…”

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Comparative studies of nonpolar (10-10) ZnO films grown by using atomic layer deposition and radio-frequency magnetron sputtering

Choi

Son

Choi

et al. 2014

Journal of the Korean Physical Society

Self Cite

View full text Add to dashboard Cite

We comparatively investigated the crystal and the optical properties of nonpolar (10-10) ZnO films grown on m-plane sapphire substrates by using atomic layer deposition (ALD) and radio frequency (RF) magnetron sputtering. From high-resolution X-ray ω/2θ scans, the (100) peak of the ALD-grown ZnO film was clearly developed at ∼ 15.9 • while that of the RF sputter-grown ZnO was broadly observed at 15.6 ∼ 15.9 • , indicating that a nonpolar (10-10) ZnO film would be preferentially grown on an m-plane sapphire substrate. The photoluminescence bandedge emission intensity of the ALD-grown (10-10) ZnO film was ten times higher than that of the RF sputtergrown ZnO film. In addition, the electroluminescence intensity of a semipolar (11-22) GaN-based light-emitting diode (LED) with an ALD-grown (10-10) ZnO film as a transparent conductive oxide material was much higher than that of a semipolar (11-22) GaN-based LED with RF sputter-grown (10-10) ZnO film.

show abstract

A High‐Photocurrent and Fast‐Response Polarity‐Controlled ZnO‐Based UV Photodetector Grown by a Sol–Gel Process

Lee

Baek

Kim

et al. 2020

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

Oxygen‐polar (O‐polar) and nonpolar ZnO‐based UV photodetectors (PDs) are fabricated using a sol–gel (SG) method on polarity‐controlled ZnO seed layers grown by atomic layer deposition (ALD). O‐polar c‐plane and nonpolar a‐plane ZnO films grown using the SG process are obtained using ALD‐grown ZnO seed layers on c‐plane and r‐plane sapphire substrates, respectively. In addition, the photoluminescence intensity of the O‐polar c‐plane ZnO film is higher than that of the nonpolar a‐plane ZnO film owing to the introduction of the ZnO seed layer. Therefore, the resulting photocurrent of the O‐polar c‐plane ZnO PD is higher than that of the nonpolar a‐plane ZnO PD. Furthermore, regardless of the crystal polarity, the carrier concentration and the mobility of the ZnO film deposited using the SG method significantly increase because of the ZnO seed layer. In particular, the carrier concentration of the nonpolar a‐plane ZnO film is 2.5 times higher than that of the O‐polar c‐plane ZnO film. Therefore, the time‐dependent photoresponsivity of the nonpolar a‐plane ZnO PD is faster than that of the O‐polar c‐plane ZnO PD. These results indicate that the ZnO seed layers can effectively control the crystal polarity of ZnO films grown using the SG method.

show abstract

Growth and characterization of polar and nonpolar ZnO film grown on sapphire substrates by using atomic layer deposition

Cited by 22 publications

References 16 publications

Morphological and electrical evolution of ZnO: Al thin filmsdeposited by RF magnetron sputtering onto glass substrates

Morphological and electrical evolution of ZnO: Al thin filmsdeposited by RF magnetron sputtering onto glass substrates

Comparative studies of nonpolar (10-10) ZnO films grown by using atomic layer deposition and radio-frequency magnetron sputtering

A High‐Photocurrent and Fast‐Response Polarity‐Controlled ZnO‐Based UV Photodetector Grown by a Sol–Gel Process

Contact Info

Product

Resources

About