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We comparatively investigated the crystal and the optical properties of nonpolar (10-10) ZnO films grown on m-plane sapphire substrates by using atomic layer deposition (ALD) and radio frequency (RF) magnetron sputtering. From high-resolution X-ray ω/2θ scans, the (100) peak of the ALD-grown ZnO film was clearly developed at ∼ 15.9 • while that of the RF sputter-grown ZnO was broadly observed at 15.6 ∼ 15.9 • , indicating that a nonpolar (10-10) ZnO film would be preferentially grown on an m-plane sapphire substrate. The photoluminescence bandedge emission intensity of the ALD-grown (10-10) ZnO film was ten times higher than that of the RF sputtergrown ZnO film. In addition, the electroluminescence intensity of a semipolar (11-22) GaN-based light-emitting diode (LED) with an ALD-grown (10-10) ZnO film as a transparent conductive oxide material was much higher than that of a semipolar (11-22) GaN-based LED with RF sputter-grown (10-10) ZnO film.