Growth and characterization of SiGeSn quantum well photodiodes

Fischer, I. A.; Wendav, Torsten; Augel, Lion; Jitpakdeebodin, Songchai; Oliveira, Filipe; Benedetti, Alessandro; Stefanov, Stefan; Chiussi, S.; Capellini, Giovanni; Busch, Kurt; Schulze, Jörg

doi:10.1364/oe.23.025048

Cited by 47 publications

(33 citation statements)

References 23 publications

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“…Here, R C is the contact resistance, R sh is the semiconductor sheet resistance, L is the length of the contact (204 μm) and l is the distance between adjacent contact pads. The specific contact resistivity for each sample can then be obtained using equation (2) with the values for R , C R sh obtained from data fitting and the contact length L=204 μm (with transfer length L T ): Figure 6 shows the dependence of the specific contact resistivity on the Sn content in the Si x Ge 1−x−y Sn y layers for the different metallic contacts. The Al metal contacts exhibit an average specific resistivity of 4.5×10 −5 Ohm cm 2 (7.5% Sn) and 3.0×10 −5 Ohm cm 2 (9.5% Sn).…”

Section: Fabrication and Processingmentioning

confidence: 99%

“…While the binary Ge 1−y Sn y has been shown to be a direct bandgap material for large enough Sn content, the ternary alloy Si x Ge 1−x−y Sn y could also be a direct bandgap material in a certain compositional range with a lattice constant that can be adjusted more easily [1]. Si x Ge 1−x−y Sn y has been proposed as barrier material in Ge 1−y Sn y /Si x Ge 1−x−y Sn y multi-quantum well laser structures [1] and has successfully been incorporated experimentally into Si x Ge 1−x−y Sn y and Ge 1−y Sn y /Si x Ge 1−x−y Sn y multi-quantum well diodes [2,3]. Furthermore, doped Si x Ge 1−x−y Sn y can serve as cladding material for active Ge 1−y Sn y layers with lower bandgaps in optoelectronic devices such as light emitting diodes or lasers.…”

Section: Introductionmentioning

confidence: 99%

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Electrical characterization of n-doped SiGeSn diodes with high Sn content

Clausen¹,

Fischer²,

Weißhaupt³

et al. 2018

Semicond. Sci. Technol.

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Diodes incorporating undoped and Sb-doped Si x Ge 1−x−y Sn y layers grown by molecular beam epitaxy with different alloy compositions and lattice-matched to Ge were fabricated and characterized experimentally. We discuss material as well as electrical device characterization and investigate different contact metallizations (Ni and Al). In particular, we investigate the formation of Ni(Si x Ge 1−x−y Sn y) on the doped Sb-doped Si x Ge 1−x−y Sn y layers via annealing based on material characterization and measurements of specific contact resistivities. Our results can serve as a starting point for the investigation of Si x Ge 1−x−y Sn y layers with high Si and Sn content as cladding material in optoelectronic devices such as lasers and light emitting diodes.

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Section: Fabrication and Processingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electrical characterization of n-doped SiGeSn diodes with high Sn content

Clausen¹,

Fischer²,

Weißhaupt³

et al. 2018

Semicond. Sci. Technol.

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“…[1][2][3][4][5][6][7][8][9] The successful demonstration of direct bandgap GeSn light emitting diodes (LEDs), and optically-pumped GeSn lasers, [10][11][12][13][14] indicates the great potential of GeSn for Si-based light sources. GeSn LEDs with double heterostructures (DHS) 11,[15][16][17][18][19][20][21][22] and quantum wells (QWs) [23][24][25][26][27][28][29][30][31] have been reported. It is generally acknowledged that the QW structures could be applied to the LEDs and lasers to improve their device performance.…”

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confidence: 99%

Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

et al. 2018

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This paper reports the comprehensive characterization of a Ge0.92Sn0.08/Ge0.86Sn0.14/Ge0.92Sn0.08 single quantum well. By using a strain relaxed Ge0.92Sn0.08 buffer, the direct bandgap Ge0.86Sn0.14 QW was achieved, which is unattainable by using only a Ge buffer. Band structure calculations and optical transition analysis revealed that the quantum well features type-I band alignment. The photoluminescence spectra showed dramatically increased quantum well peak intensity at lower temperature, confirming that the Ge0.86Sn0.14 quantum well is a direct bandgap material.

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“…Driven by photonic applications, strong efforts have been made investigating the epitaxial growth of SiGeSn alloys in recent years . A multitude of applications of this material in nanoelectronic, optoelectronic or photovoltaic applications is foreseen.…”

Section: Introductionmentioning

confidence: 99%

SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters

Driesch

Stange

Wirths

et al. 2017

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SiGeSn ternaries are grown on Ge‐buffered Si wafers incorporating Si or Sn contents of up to 15 at%. The ternaries exhibit layer thicknesses up to 600 nm, while maintaining a high crystalline quality. Tuning of stoichiometry and strain, as shown by means of absorption measurements, allows bandgap engineering in the short‐wave infrared range of up to about 2.6 µm. Temperature‐dependent photoluminescence experiments indicate ternaries near the indirect‐to‐direct bandgap transition, proving their potential for ternary‐based light emitters in the aforementioned optical range. The ternaries' layer relaxation is also monitored to explore their use as strain‐relaxed buffers, since they are of interest not only for light emitting diodes investigated in this paper but also for many other optoelectronic and electronic applications. In particular, the authors have epitaxially grown a GeSn/SiGeSn multiquantum well heterostructure, which employs SiGeSn as barrier material to efficiently confine carriers in GeSn wells. Strong room temperature light emission from fabricated light emitting diodes proves the high potential of this heterostructure approach.

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Growth and characterization of SiGeSn quantum well photodiodes

Cited by 47 publications

References 23 publications

Electrical characterization of n-doped SiGeSn diodes with high Sn content

Electrical characterization of n-doped SiGeSn diodes with high Sn content

Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge- buffered Si substrate

SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters

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