Growth and characterization of silicon nitride films for optoelectronics applications

Pandey, R.K.; Patil, L. S.; Bange, Jaspal P.; Gautam, D. K.

doi:10.1016/j.optmat.2004.02.028

Cited by 27 publications

(24 citation statements)

References 38 publications

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“…It has a clearly pronounced peak at around 929 cm −1 and a sharp peak at 473 cm −1 . These strong absorptions are assigned to the Si–N stretching and Si–N deformation mode, respectively 17 . An obvious d ‐shift of the Si–N vibrations due to size effect can be noticed (normally 840 cm −1 for Si–N stretching).…”

Section: Resultsmentioning

confidence: 93%

Nitridation of Silica to an α‐Silicon Nitride Nanorod Using NaNH₂ in the Autoclave at 700°C

Zhu

Chen

Huang

et al. 2007

Journal of the American Ceramic Society

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α‐silicon nitride nanorods have been synthesized through solid‐state reduction–nitridation of silica using NaNH2 as both a reductant and a nitriding reagent. X‐ray powder diffraction patterns show that the products have a hexagonal phase with lattice parameters a=7.767 Å and c=5.630 Å. Transmission electron microscopy reveals that the as‐synthesized products are pure nanorods with an average size about 30 nm in diameter and 400 nm in length. X‐ray photoelectron spectra indicate that the molar ratio of Si/N is 2.988:4. Fourier‐transform infrared spectrum yields a strong Si–N absorption at 926 cm−1 that may be a red shift due to size effect.

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Section: Resultsmentioning

confidence: 93%

Nitridation of Silica to an α‐Silicon Nitride Nanorod Using NaNH₂ in the Autoclave at 700°C

Zhu

Chen

Huang

et al. 2007

Journal of the American Ceramic Society

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“…1,2 Wide applications of SiNx films rely on their remarkable properties, such as high hardness, chemical inertness, excellent thermal stability, and insulation. [1][2][3][4] One critical factor restricting the practical applications of SiNx is the residual stress developed from deposition, which is generally a high tensile stress under a standard low-pressure chemical vapor deposition (LPCVD) 5,6 or plasma-enhanced chemical vapor deposition (PECVD) process. 1,7 High film stress will result in rough film surface, film cracking, or increased defect density, all of which will lead to the degradation of the performance of microelectronic or optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Stress Engineering of SiNx Films for Modifying Optical and Mechanical Properties

Zhang

et al. 2009

J. Phys. Chem. C

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This article presents an approach for the adjustment of residual stress in silicon nitride (SiNx) films by constructing a composite multilayer structure. Curvature and Raman measurement results indicate that with the introduction of a 240-nm-thick SiO 2 sublayer, the residual stress in a 110-nm-thick SiNx film varies dramatically from high tensile stress (+358 MPa) to low compressive stress (-57 MPa). The adjustment of film stress leads to the improvement of film quality and the increase of refractive index. However, it also leads to the decreases of Young's modulus and film hardness of SiNx. Particularly, the optical band gap of SiNx remains almost unchanged during the process. This work demonstrates the practical feasibility of modifying the physical properties of SiNx with the film stress, and suggests a new physical route to stress engineering of SiNx films for microelectronic and optoelectronic applications.

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“…Μάλιστα, το ποσοστό του υδρογόνου που δεσμεύεται κατά τη διάρκεια της εναπόθεσής αυξάνεται όταν η θερμοκρασία εναπόθεσης μειώνεται [98], [90], [96], [102]. Οι δεσμοί Si-H φαίνεται να κυριαρχούν στα υμένια που εμφανίζουν περίσσεια πυριτίου (Si) ενώ οι δεσμοί N-H στα υμένια που εμφανίζουν περίσσεια αζώτου (N) [103], και συγκεκριμένα όταν N/Si = x >0.8 [104].…”

Section: κεφαλαιο 2: ηλεκτρικες ιδιοτητες λεπτων μονωτικων υμενιωνunclassified

“…Η παγίδευση των φορτίων στο HT υλικό αναμένεται έτσι να λαμβάνει χώρα στην περιοχή του υμενίου κοντά στους μεταλλικούς οπλισμούς. Η συνεισφορά στην πόλωση από την μετακίνηση ιόντων υδρογόνου στο εσωτερικό του HT υλικού θα είναι μικρότερη απ' ότι στο LT υλικό καθώς το ποσοστό του υδρογόνου που δεσμεύεται στο SiNx μειώνεται όταν αυξηθεί η θερμοκρασία εναπόθεσης του υμενίου [102], [140].…”

Section: επίδραση της θερμοκρασίας εναπόθεσηςunclassified

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Μελέτη Και Βελτιστοποίηση Των Ηλεκτρικών Ιδιοτήτων Λεπτών Μονωτικών Υμενίων Που Χρησιμοποιούνται Σε Μικρο-Ηλεκτρο-Μηχανικά Συστήματα (MEMS)

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Growth and characterization of silicon nitride films for optoelectronics applications

Cited by 27 publications

References 38 publications

Nitridation of Silica to an α‐Silicon Nitride Nanorod Using NaNH₂ in the Autoclave at 700°C

Nitridation of Silica to an α‐Silicon Nitride Nanorod Using NaNH₂ in the Autoclave at 700°C

Stress Engineering of SiNx Films for Modifying Optical and Mechanical Properties

Μελέτη Και Βελτιστοποίηση Των Ηλεκτρικών Ιδιοτήτων Λεπτών Μονωτικών Υμενίων Που Χρησιμοποιούνται Σε Μικρο-Ηλεκτρο-Μηχανικά Συστήματα (MEMS)

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Growth and characterization of silicon nitride films for optoelectronics applications

Cited by 27 publications

References 38 publications

Nitridation of Silica to an α‐Silicon Nitride Nanorod Using NaNH2 in the Autoclave at 700°C

Nitridation of Silica to an α‐Silicon Nitride Nanorod Using NaNH2 in the Autoclave at 700°C

Stress Engineering of SiNx Films for Modifying Optical and Mechanical Properties

Μελέτη Και Βελτιστοποίηση Των Ηλεκτρικών Ιδιοτήτων Λεπτών Μονωτικών Υμενίων Που Χρησιμοποιούνται Σε Μικρο-Ηλεκτρο-Μηχανικά Συστήματα (MEMS)

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Nitridation of Silica to an α‐Silicon Nitride Nanorod Using NaNH₂ in the Autoclave at 700°C

Nitridation of Silica to an α‐Silicon Nitride Nanorod Using NaNH₂ in the Autoclave at 700°C