Growth and characterization of single crystal insulators on silicon

Schowalter, L. J.; Fathauer, R. W.

doi:10.1080/10408438908243740

Cited by 124 publications

(31 citation statements)

References 77 publications

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“…Silicides formed by metals of the first and second group are ionic-covalent bonded and unstable to post-treatment processes. 2 In connection with the use of CaF 2 on Si as a high-DK(dielectric constant) gate dielectric (ε r D 6.8, E g D 12.1 eV) in highly integrated MIS (metal-insulator-semiconductor) devices 3 and as a buffer layer in silicon-based heterostructures, 4 the interface reaction of silicon and calcium became of utmost importance. For substrate temperatures >450°C the epitaxial growth of CaF 2 films on Si(111) is accompanied by an interface reaction characterized by the desorption of fluorine.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of CaSi₂ on Si(111)

Schöpke

Würz

Schmidt

2002

Surface & Interface Analysis

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Thin Ca films were evaporated on Si(111) under ultrahigh vacuum conditions and annealed in the temperature range 200-650• C. The interdiffusion of Ca and Si was examined by ex situ Auger depth profiling. In situ monitoring of the Si 2p core-level shift by x-ray photoelectron spectroscopy was employed to study the silicide formation process. The formation temperature of CaSi 2 films on Si(111) was found to be ∼350 • C. Epitaxial growth takes place at ≥400 • C. The morphology of the films, observed by atomic force microscopy, was correlated with their crystallinity as analysed by x-ray diffraction.

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Section: Introductionmentioning

confidence: 99%

Epitaxial growth of CaSi₂ on Si(111)

Schöpke

Würz

Schmidt

2002

Surface & Interface Analysis

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“…On the other hand, dewetting behavior has been observed for CaF 2 / Si͑001͒ due to the instability of the polar CaF 2 ͑001͒ surface. 1 Thus resonant tunneling devices involving CaF 2 tunneling barriers are based on Si͑111͒ substrates.…”

Section: Introductionmentioning

confidence: 99%

Structural transitions and relaxation processes during the epitaxial growth of ultrathinCaF2films on Si(111)

et al. 2010

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The structure and morphology of ultrathin lattice matched CaF 2 films of very few monolayers thickness, which were deposited on Si͑111͒ substrates by molecular-beam epitaxy, have been studied in situ by synchrotron based grazing incidence x-ray diffraction. Even for the thinnest investigated film of three monolayers thickness, the in-plane structure of the CaF 2 film is determined by a lateral separation in two domains: a pseudomorphic phase assuming the lateral lattice constant of the Si͑111͒ substrate and a completely relaxed phase. Analysis of the crystal truncation rods verifies that both phases adopt the entire homogeneous CaF 2 film thickness. Therefore, we propose that atomic steps of the substrate bypass the nucleation barrier for the formation of ͑Shockley partial͒ dislocations so that the film starts to relax below the classical critical film thickness. While the relaxed phase assumes also the CaF 2 bulk lattice constant for the vertical direction, the vertical lattice constant of the pseudomorphic phase increases due to the compressive lateral strain at the interface. This vertical expansion of the pseudomorphic phase, however, is larger than expected from the elastic constants of the CaF 2 bulk. The fraction of the pseudomorphic CaF 2 phase decreases with increasing film thickness. The interface between the pseudomorphic CaF 2 phase and the Si͑111͒ substrate is characterized by Ca on T 4 sites, a smaller distance between the Si͑111͒ substrate and the CaF interface layer and an expanded layer distance between CaF interface layer and the completely stoichiometric CaF 2 film.

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“…Epitaxial oxide/Si heterostructures are also of interest as templates for the integration of epitaxial functional materials with Si [2]. Binary insulators with the cubic fluorite structure, and its derivatives, are known to grow epitaxially on (111) oriented Si [3][4][5][6][7][8][9][10]. Oxides with the pyrochlore and bixbyite structures are vacancy-ordered derivatives of the fluorite structure and have lattice parameters that are approximately twice that of Si.…”

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confidence: 99%