Growth and Characterization of Tin Disulfide Single Crystals

Abstract

Tin disulfide is a layered semiconductor, crystallizing in the cadmium iodide structure, with a band gap of 2.2 eV. The layered structure makes it useful for many experiments where a semiconductor with a reproducible renewable surface is needed. The easy cleavage of the surface exposes a clean atomically flat surface for use as a substrate for the deposition of solid-state materials or molecules or scanning probe microscopy experiments. Its semiconducting properties are also useful for photoelectrochemical dye sensitization studies. We report the crystal growth of this material by a Bridgman method with control of the dopant identity and level to obtain useful n-type semiconducting properties. Doping levels measured with both Hall effect and Mott Schottky analysis were well correlated. The electron mobility and hole diffusion lengths were also measured for the various doped crystals using solid-state and photoelectrochemical techniques.

Electron-Beam Induced Transformations of Layered Tin Dichalcogenides

“…42 The layered bulk crystals were exfoliated into thinner flakes, including few-layer and single-layer SnS 2 and SnSe 2 according to the methods described in Ref. 43 .…”

Intrinsic Disorder in Graphene on Transition Metal Dichalcogenide Heterostructures

“…Figure 5 In addition to their similar crystal structure, these TMDs also share similar electronic properties. They are indirect gap semiconductors with band gaps in bulk ranging from about 1.0 eV to 1.4 eV [19] (and 2.2 eV for SnS 2 [23]). In proximity to graphene, the difference in energy between the graphene work function and the electron affinity of the TMD determines the relative band alignment.…”

Balancing Light Absorption and Charge Transport in Vertical SnS2 Nanoflake Photoanodes with Stepped Layers and Large Intrinsic Mobility

“…The LHE of our optimized nanoflakes was measured using an integrating sphere, as described in our previous report. [18][19][20]41] This indirect bandgap is also evident from the broad photoluminescence (PL) peak centered at 588 nm (2.11 eV) in Figure 4c. The Tauc plot in Figure 4b shows the indirect bandgap of SnS 2 to be about 2.1 eV, which is in agreement with other reports in the literature.…”

“…The Tauc plot in Figure 4b shows the indirect bandgap of SnS 2 to be about 2.1 eV, which is in agreement with other reports in the literature. [18][19][20]41] This indirect bandgap is also evident from the broad photoluminescence (PL) peak centered at 588 nm (2.11 eV) in Figure 4c.…”