Growth and characterization of totally relaxed InGaAs thick layers on strain-relaxed paramorphic InP substrates

Boudaa, M.; Régrény, Philippe; Leclercq, Jean‐Louis; Besland, Marie-Paule; Marty, Olivier; Hollinger, G.

doi:10.1007/s11664-004-0250-3

Cited by 3 publications

(3 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Additionally, heat treatments over 400 °C cannot be performed for III‐V semiconductor compound films without plastic deformation of the alloy films. In a separate experiment, relaxation of InGaAs strained regions was achieved in selectively etched mesas that allowed very small areas of the film (300 μm × 300 μm) to relax 12–14. Although the film relaxes, it is trapped between other mesas, limiting its applicability to device fabrication.…”

mentioning

confidence: 99%

Wafer‐Scale Strain Engineering of Ultrathin Semiconductor Crystalline Layers

et al. 2011

View full text Add to dashboard Cite

The fabrication of a wafer-scale dislocation-free, fully relaxed single crystalline template for epitaxial growth is demonstrated. Transferring biaxially-strained Inx Ga1-x As ultrathin films from InP substrates to a handle support results in full strain relaxation and the Inx Ga1-x As unit cell assumes its bulk value. Our realization demonstrates the ability to control the lattice parameter and energy band structure of single layer crystalline compound semiconductors in an unprecedented way.

show abstract

mentioning

confidence: 99%

Wafer‐Scale Strain Engineering of Ultrathin Semiconductor Crystalline Layers

et al. 2011

View full text Add to dashboard Cite

show abstract

“…Elastically strain relaxed InGaAs regions have been made starting with mesas that were subsequently undercut, allowing the relaxed InGaAs tethered regions to fall to the substrate below to create areas of relaxed material. 15,16 We describe here a methodology that extends the above approaches in that it allows the fabrication of large freestanding elastically strain-relaxed membranes. In our case the membranes are SiGe based, but the concept is generalizable.…”

mentioning

confidence: 99%

Elastically relaxed free-standing strained-silicon nanomembranes

et al. 2006

View full text Add to dashboard Cite

Strain plays a critical role in the properties of materials. In silicon and silicon-germanium, strain provides a mechanism for control of both carrier mobility and band offsets. In materials integration, strain is typically tuned through the use of dislocations and elemental composition. We demonstrate a versatile method to control strain by fabricating membranes in which the final strain state is controlled by elastic strain sharing, that is, without the formation of defects. We grow Si/SiGe layers on a substrate from which they can be released, forming nanomembranes. X-ray-diffraction measurements confirm a final strain predicted by elasticity theory. The effectiveness of elastic strain to alter electronic properties is demonstrated by low-temperature longitudinal Hall-effect measurements on a strained-silicon quantum well before and after release. Elastic strain sharing and film transfer offer an intriguing path towards complex, multiple-layer structures in which each layer's properties are controlled elastically, without the introduction of undesirable defects.

show abstract

“…For example electrical characterization of GaN HEMT transistors epitaxied on Si bonded on poly cristalline silicon carbide will be presented [1]. In the field of specific III-V compositions for laser applications an innovative technique has been developed to reach relaxed InGaAs layers using a temporary carrier wafer made of polymer [2,3]. "3D interconnection technology": Interconnection techniques between CMOS which improve available pin count in 3D structures communication bandwidth and dissipated power are needed.…”

Section: "New Hetero Structures"mentioning

confidence: 99%