Growth and characterization of WSe2 single crystals using TeCl4 as transport agent

Bougouma, Moussa; Nisol, Bernard; Doneux, Thomas; Guel, Boubié; Segato, Tiriana; Reniers, François; Delplancke‐Ogletree, Marie‐Paule; Legma, Jean B.; Buess‐Herman, C.

doi:10.1016/j.jcrysgro.2016.08.025

Cited by 10 publications

(6 citation statements)

References 39 publications

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“…For MoSe 2 crystals, the two peaks located at 232.7 and 229.6 eV are attributed to Mo 3d 3/2 and Mo 3d 5/2 , respectively (figure S9(d)). These values are consistent with previous reports regarding W(Mo)Se 2 [28,29]. The absence of impurity peaks in all obtained XPS spectra indicate the highquality of as-grown W(Mo)Se 2 crystals.…”

Section: Resultssupporting

confidence: 92%

Controllable growth of multilayered XSe₂ (X = W and Mo) for nonlinear optical and optoelectronic applications

Ye¹,

Liu²,

Chen³

et al. 2021

2D Mater.

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The layered transition metal dichalcogenides (TMDs) exhibit the intriguing physical properties and potential application in novel electronic devices. However, controllable growth of multilayer TMDs remains challenging. Herein, large-scale and high-quality multilayer prototype TMDs of W(Mo)Se2 were synthesized via chemical vapor deposition. For Raman and photoluminescence measurements, 2H and 3R multilayer WSe2 crystals displayed significant layer-dependent peak position and intensity feature. Besides, different from the oscillatory relationship of second harmonic generation (SHG) intensity for odd–even layer numbers in 2H-stacked multilayer WSe2, the SHG intensity of 3R-stacked ones parabolically increased with the thickness due to the absence of inversion symmetry. For device application, photodetectors based on WSe2 with increasing thickness exhibited p-type (bilayer), ambipolar (trilayer), and n-type (four layers) semiconductor behaviors, respectively. Furthermore, photodetectors based on the as-synthesized 3R-stacked WSe2 flakes displayed an excellent responsivity of 7.8 × 103 mA W−1, high specific detectivity (Da*) of 1.7 × 1014 Jones, outstanding external quantum efficiency of 8.6 × 102%, and fast response time (τ Rise = 57 ms and τ Fall = 53 ms) under 532 nm illumination with bias voltage of V ds = 5 V. Similar results have also been achieved in multilayer MoSe2 crystals. All these findings indicate great potential of 3R-stacked TMDs in two-dimensional optoelectronic applications.

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Section: Resultssupporting

confidence: 92%

Controllable growth of multilayered XSe₂ (X = W and Mo) for nonlinear optical and optoelectronic applications

Ye¹,

Liu²,

Chen³

et al. 2021

2D Mater.

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“…Layered transition metal dichalcogenides with unique mechanical, electronic, optical and chemical properties are the candidate materials of electronic and optoelectronic devices [1,2].…”

Section: Introductionmentioning

confidence: 99%

“…Apparently, this is related to the gas transport effects. During the substrate heating, Se powder gradually evaporates and this means that the silicon substrate is covered by hydrogen, i.e., MoO 3 is mainly reduced by hydrogen into MoO 3-x or MoO 2 according to reaction(1). When sufficient amount of Se powder is evaporated, diffusion rate of Se atoms eventually hindering the diffusion of hydrogen atoms on the silicon surface.…”

mentioning

confidence: 99%

Effects of hydrogen on the structural and optical properties of MoSe2 grown by hot filament chemical vapor deposition

Wang

Zhu

Levchenko

et al. 2017

Journal of Crystal Growth

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The role of reactive environment and hydrogen specifically in growth and structure of molybdenum selenide (MoSe 2 ) nanomaterials is presently debated, and it is not clear whether hydrogen can promote the growth of MoSe 2 sheets and alter their electronic properties. To find efficient, convenient methods for controlling the nucleation, growth and resultant properties of MoSe 2 nanomaterials, MoSe 2 nanoflakes were synthesized on silicon substrates by hot filament chemical vapor deposition using molybdenum trioxide and selenium powders in pure hydrogen, nitrogen gases and hydrogen-nitrogen mixtures. The structures and composition of synthesized MoSe 2 nanoflakes were studied using the advanced characterization instruments including field emission scanning electron microscopy, micro-Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and energy dispersive X-ray spectrometry. The analysis of the growth process indicates that hydrogen can improve the formation of MoSe 2 nanoflakes and significantly alter their properties due to the high reduction capacity of hydrogen and the creation of more nucleation centers of MoSe 2 nanoflakes on the silicon surface. The study of photoluminescent (PL) properties reveals that the MoSe 2 nanoflakes can generate a strong PL band at about 631 nm, differently from the plain MoSe 2 nanoflakes. The major difference in the PL properties may be related to the edges of MoSe 2 nanoflakes. These results can be used to control the growth and structure of MoSe 2 -based nanomaterials and contribute to the development of advanced MoSe 2 -based optoelectronic devices.

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“…This gas is transported to another part of the reaction system under other physicochemical conditions, where a crystal of the initial material grows. For the growth of dichalcogenide crystals, halogens or their chemical compounds are used as transport reagents. , …”

Section: Introductionmentioning

confidence: 99%

“…For the growth of dichalcogenide crystals, halogens or their chemical compounds are used as transport reagents. 12,13 The flux crystal growth technique 14,15 usually consists of gradual cooling of a multicomponent flux. As the temperature is decreased, the solubility of the components is reduced, leading to the crystallization of certain substances.…”

Section: ■ Introductionmentioning

confidence: 99%

Growth of Transition-Metal Dichalcogenides by Solvent Evaporation Technique

Чареев

Evstigneeva

Phuyal

et al. 2020

Crystal Growth & Design

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Due to their physical properties and potential applications in energy conversion and storage, transition metal dichalcogenides (TMDs) have garnered substantial interest in recent years. Amongst this class of materials, TMDs based on molybdenum, tungsten, sulfur and selenium are particularly attractive due to their semiconducting properties and the availability of bottom-up synthesis techniques. Here we report a method which yields high quality crystals of transition metal diselenide and ditelluride compounds (

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Growth and characterization of WSe2 single crystals using TeCl4 as transport agent

Cited by 10 publications

References 39 publications

Controllable growth of multilayered XSe₂ (X = W and Mo) for nonlinear optical and optoelectronic applications

Controllable growth of multilayered XSe₂ (X = W and Mo) for nonlinear optical and optoelectronic applications

Effects of hydrogen on the structural and optical properties of MoSe2 grown by hot filament chemical vapor deposition

Growth of Transition-Metal Dichalcogenides by Solvent Evaporation Technique

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Growth and characterization of WSe2 single crystals using TeCl4 as transport agent

Cited by 10 publications

References 39 publications

Controllable growth of multilayered XSe2 (X = W and Mo) for nonlinear optical and optoelectronic applications

Controllable growth of multilayered XSe2 (X = W and Mo) for nonlinear optical and optoelectronic applications

Effects of hydrogen on the structural and optical properties of MoSe2 grown by hot filament chemical vapor deposition

Growth of Transition-Metal Dichalcogenides by Solvent Evaporation Technique

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Product

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Controllable growth of multilayered XSe₂ (X = W and Mo) for nonlinear optical and optoelectronic applications

Controllable growth of multilayered XSe₂ (X = W and Mo) for nonlinear optical and optoelectronic applications