Growth and characterization of β-Ga2O3 thin films by sol-gel method for fast-response solar-blind ultraviolet photodetectors

Shen, Hao; Yin, Yinong; Tian, Kun; Baskaran, Karthikeyan; Duan, Libing; Zhao, Xiaoru; Tiwari, Ashutosh

doi:10.1016/j.jallcom.2018.06.313

Cited by 106 publications

(47 citation statements)

References 43 publications

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“…This proves that a larger E g of polycrystalline samples has been obtained after annealing with the diffusion of Al from the sapphire substrate into Ga 2 O 3 to form (Al x Ga 1-x ) 2 O 3 . The R max of the device annealed at 1100°C is 35 μA/W, which is smaller than the 0.037 A/W, 0.903 A/W, and 1.13 mA/W those were grown by MBE [5], PLD [25], and sol-gel method [26], respectively, due to the fact that the poly-Ga 2 O 3 has a low transmittance, as shown in Fig. 5a.…”

Section: Resultsmentioning

confidence: 85%

“…Further, the increased grain size with PAT can reduce the photocarriers transportation time, improving the relaxation time properties of the devices. Table 4 shows the comparison of the I dark , rise time (τ r ), and decay time (τ d ) of solar-blind photodetectors based on β-, α-, and ε-Ga 2 O 3 thin films synthesized by RFMS [30] and other techniques [2,6,26,[31][32][33][34]. As seen, the device has both low dark current and fast response time is difficult, but the photodetector we fabricated presents the low dark current and fast response time.…”

Section: Resultsmentioning

confidence: 99%

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Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire

Liu

Han

et al. 2020

Nanoscale Res Lett

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Effects of post annealing on the physical and electrical properties of solar-blind polycrystalline gallium oxide (Ga 2 O 3) ultraviolet photodetectors on the sapphire substrate are investigated. The grain size of poly-Ga 2 O 3 becomes larger with the post annealing temperature (PAT) increasing from 800°C to 1000°C, but it gets smaller with further raising PAT to 1100°C. A blue shift is observed at the absorption edge of the transmittance spectra of Ga 2 O 3 on sapphire as increasing PAT, due to the incorporation of Al from the sapphire substrate into Ga 2 O 3 to form (Al x Ga 1-x) 2 O 3. The high-resolution X-ray diffraction and transmittance spectra measurement indicate that the substitutional Al composition and bandgap of (Al x Ga 1-x) 2 O 3 annealed at 1100°C can be above 0.30 and 5.10 eV, respectively. The R max of the sample annealed at 1000°C increases about 500% compared to the as-deposited device, and the sample annealed at 1000°C has short rise time and decay time of 0.148 s and 0.067 s, respectively. This work may pave a way for the fabrication of poly-Ga 2 O 3 ultraviolet photodetector and find a method to improve responsivity and speed of response.

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Section: Resultsmentioning

confidence: 85%

Section: Resultsmentioning

confidence: 99%

Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire

Liu

Han

et al. 2020

Nanoscale Res Lett

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“…Minh-Tan Ha, Kyoung-Ho Kim, Yun-Ji Shin, Seong-Min Jeong, and Si-Young Bae* DOI: 10.1002/admi.202001895 vapor phase epitaxy has been used to grow the metastable αand ε-Ga 2 O 3 phases at a high rate, [14] and sol-gel routes (e.g., spin coating and spray pyrolysis) have been employed to deposit β-Ga 2 O 3 thin films. [15][16][17][18] Mist chemical vapor deposition (mist CVD) is considered to be a combination of the CVD and sol-gel approaches. Mist CVD is preferred to other methods due to its facile, cost-effective (atmospheric pressure, single-step operation), and environmentally friendly characteristics (non-toxic precursors).…”

Section: Leidenfrost Motion Of Water Microdroplets On Surface Substramentioning

confidence: 99%

Leidenfrost Motion of Water Microdroplets on Surface Substrate: Epitaxy of Gallium Oxide via Mist Chemical Vapor Deposition

Kim

Shin

et al. 2021

Adv Materials Inter

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It is hypothesized that gravity‐driven sedimentation and gliding of water microdroplets on a substrate surface due to the Leidenfrost effect explain the deposition behaviors of epilayers via mist chemical vapor deposition (mist CVD). The deposition rate, thickness uniformity, and surface morphology are dependent on the velocity, incident angle, incident probability, gliding distance, and the lifetime of the droplets on the surface of the substrate. Practically, the deposition of corundum structured gallium oxide (α‐Ga2O3) epilayers on a tilted 2‐inch c‐plane sapphire substrate validated the hypothesis. A high substrate tilt angle and a low mist stream velocity are favorable for a high deposition rate. In contrast, a low substrate tilt angle and a high mist stream velocity are suitable for high uniformity and stable deposition of the α‐Ga2O3 thin films via mist CVD.

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“…The roughness value of this transformed β‐Ga 2 O 3 film is very low compared to films grown by the conventional heteroepitaxy method, but there exist some cases having slightly lower roughness value among reports about β‐Ga 2 O 3 films grown by the sol‐gel, pulse laser deposition (PLD), molecular beam epitaxy (MBE), etc. [ 29,30 ] However, most of the reported β‐Ga 2 O 3 films were relatively thin. As the thickness of the films is strongly related to the surface roughness, it is difficult to conclude that this is an appropriate comparison.…”

Section: Resultsmentioning

confidence: 99%

Formation of High‐Quality Heteroepitaxial β‐Ga₂O₃ Films by Crystal Phase Transition

Lee

Kim

Ahn

et al. 2020

Crystal Research and Technology

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Sn‐doped ɛ‐phase dominant Ga2O3 films (ɛ‐Ga2O3 films) are grown on c‐plane sapphire substrates using metal–organic vapor‐phase epitaxy and transformed to β‐phase films by thermal annealing. The morphological and electrical properties of the phase‐transformed β‐Ga2O3 films dependent on experimental conditions are characterized. The ɛ‐Ga2O3 film is completely transformed to the β‐phase by thermal annealing to realize a high electrical conductivity while maintaining a good surface flatness. When the ɛ‐Ga2O3 films are grown, a mixing ratio of the β‐Ga2O3 component to the ɛ‐Ga2O3 film is controlled to improve the crystalline quality of the β‐Ga2O3 films transformed from ɛ‐Ga2O3 by annealing (transformed β‐Ga2O3). Compared to an as‐grown β‐Ga2O3 film, higher‐quality heteroepitaxial β‐Ga2O3 films with better electrical conductivity and surface morphology can be obtained by the phase transition method, and these results show adequate repeatability.

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Growth and characterization of β-Ga2O3 thin films by sol-gel method for fast-response solar-blind ultraviolet photodetectors

Cited by 106 publications

References 43 publications

Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire

Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire

Leidenfrost Motion of Water Microdroplets on Surface Substrate: Epitaxy of Gallium Oxide via Mist Chemical Vapor Deposition

Formation of High‐Quality Heteroepitaxial β‐Ga₂O₃ Films by Crystal Phase Transition

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Growth and characterization of β-Ga2O3 thin films by sol-gel method for fast-response solar-blind ultraviolet photodetectors

Cited by 106 publications

References 43 publications

Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire

Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire

Leidenfrost Motion of Water Microdroplets on Surface Substrate: Epitaxy of Gallium Oxide via Mist Chemical Vapor Deposition

Formation of High‐Quality Heteroepitaxial β‐Ga2O3 Films by Crystal Phase Transition

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Formation of High‐Quality Heteroepitaxial β‐Ga₂O₃ Films by Crystal Phase Transition