Growth and Dislocation Etching of InBi0.8Sb0.2 Single Crystal

Pandya, G. R.; Desai, C. F.; Shah, Rajesh C.; Shah, Khyati

doi:10.1002/(sici)1521-4079(1998)33:5<733::aid-crat733>3.0.co;2-x

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In(bisb)1

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“…Shepelevich [66] reported work on quenched foils and electrical data in the range 77-300 K. Several authors [67][68][69] report growth of small crystals using the 'rotary' Bridgman technique (accelerated crucible rotation or ACRT) to improve interface solute clearing for InBi contents up to ∼ 7 %. At the other end of the compositional range, for InBi of ∼ 80 %, coarse polycrystals were grown by zone leveling [70].…”

Section: In(bisb)mentioning

confidence: 99%