Growth and electrical characterization of Zn-doped InAs and InAs1−xSbx

Venter, A.; Shamba, P.; Botha, L.; Botha, J.R.

doi:10.1016/j.tsf.2008.12.058

Cited by 9 publications

(3 citation statements)

References 21 publications

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“…This anomalous behavior was already observed in the 1990s [ 48 , 49 ]. It was later stated that the large mobility of electrons compared to holes results in a dominant contribution of electrons to the Hall voltage, though electrons are minority carriers in the bulk [ 50 ]. It is reflected in a change in the sign of the Hall coefficient ( R H ); see Figure 5 b.…”

Section: Resultsmentioning

confidence: 99%

Facile and Electrically Reliable Electroplated Gold Contacts to p-Type InAsSb Bulk-Like Epilayers

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Boguski

et al. 2021

Sensors

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Narrow band-gap semiconductors, namely ternary InAsSb alloys, find substantial technological importance for mid-infrared application as photodetectors in medical diagnostics or environmental monitoring. Thus, it is crucial to develop electrical contacts for these materials because they are the fundamental blocks of all semiconductor devices. This study demonstrates that electroplated gold contacts can be considered as a simple and reliable metallization technology for the electrical-response examination of a test structure. Unalloyed electroplated Au contacts to InAsSb exhibit specific contact resistivity even lower than vacuum-deposited standard Ti–Au. Moreover, temperature-dependent transport properties, such as Hall carrier concentration and mobility, show similar trends, with a minor shift in the transition temperature. It can be associated with a difference in metallization technology, mainly the presence of a Ti interlayer in vacuum-deposited contacts. Such a transition may give insight into not only the gentle balance changes between conductivity channels but also an impression of changing the dominance of carrier type from p- to n-type. The magnetotransport experiments assisted with mobility spectrum analysis clearly show that such an interpretation is incorrect. InAsSb layers are strongly p-type dominant, with a clear contribution from valence band carriers observed at the whole analyzed temperature range. Furthermore, the presence of thermally activated band electrons is detected at temperatures higher than 220 K.

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Section: Resultsmentioning

confidence: 99%

Facile and Electrically Reliable Electroplated Gold Contacts to p-Type InAsSb Bulk-Like Epilayers

Złotnik

Wróbel

Boguski

et al. 2021

Sensors

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“…The ternary alloy InAs 1−x Sb x is potentially an excellent candidate for the fabrication of mid-infrared optoelectronic devices due to its high electron mobility, thermal stability, weak dependence of the energy band gap on composition, and reduced Auger recombination [2][3][4]. Liquid phase epitaxy (LPE) technique works in a near thermodynamic equilibrium growth mode, which can yield high quality epitaxial films.…”

Section: Introductionmentioning

confidence: 99%

The complete absorption spectra of InAs0.87Sb0.13 films grown by liquid phase epitaxy

et al. 2015

Applied Surface Science

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“…Much attention has been given to InAs and InAs based alloys (InAsSbP, InGaAs and InAsSb) [1] as an attractive material for the fabrication of optoelectronic devices in the near to middle infrared wavelength region [2][3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6–3.5μm

Afrailov¹

2010

Infrared Physics & Technology

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Growth and electrical characterization of Zn-doped InAs and InAs1−xSbx

Cited by 9 publications

References 21 publications

Facile and Electrically Reliable Electroplated Gold Contacts to p-Type InAsSb Bulk-Like Epilayers

Facile and Electrically Reliable Electroplated Gold Contacts to p-Type InAsSb Bulk-Like Epilayers

The complete absorption spectra of InAs0.87Sb0.13 films grown by liquid phase epitaxy

Photoelectrical characteristics of the InAsSbP based uncooled photodiodes for the spectral range 1.6–3.5μm

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