Growth and microstructure of InxGa1−xN films grown on SiC substrates via low pressure metalorganic vapor phase epitaxy

Compositional and optical uniformity of InGaN layers deposited on (0001) sapphire by metal–organic vapour phase epitaxy

“…Not surprisingly, the technological race has led to the quick development of devices but has left open a number of questions regarding fundamental material aspects. An example is provided by the In segregation phenomena, which have been seen to produce spatial fluctuations and phase separation in the In x Ga 1−x N films [1][2][3][4].…”

Indium Segregation Kinetics in MOVPE of InGaN-Based Heterostructures

“…There are some contradictions in the reported trends of indium incorporation as a function of reactor pressure. Hanser et al [11] observed the increase in the indium composition from 13 to 23% when the reactor pressure was changed from 45 to 90 Torr. Kim et al [12] reported the opposite tendency: indium concentration in an InGaN layer increased by 7.5% as the pressure was reduced from 250 to 150 Torr.…”

Growth pressure dependence of optical and structural properties of a-plane InGaN/GaN multi-quantum wells on r-plane sapphire

“…Therefore, it is of great importance to increase In incorporation in InGaN based MQWs without the degradation of the crystal quality for efficient device applications. Hanser et al [7] reported an increased In composition from 13% to 23% as the growth pressure increased from 45 to 90 Torr. Meanwhile, Kim et al [8] demonstrated that the In concentration in an InGaN layer increased by 7.5% when the growth pressure was reduced from 250 to 150 Torr.…”