Indium Segregation Kinetics in MOVPE of InGaN-Based Heterostructures

Karpov, S. Yu.; Талалаев, Р.А.; Evstratov, I. Yu.; Makarov, Yu.N.

doi:10.1002/1521-396x(200208)192:2<417::aid-pssa417>3.0.co;2-i

Cited by 25 publications

(10 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Finally the indium concentration in the upper part of the QW slowly decays, thus forming an indium tail which penetrates into the barrier indicating unintentional indium incorporation during the barrier growth. Such indium incorporation, attributed to indium surface segregation , has already been observed in (In,Ga)(As,N) systems grown by molecular beam epitaxy (MBE) , and also in MOVPE grown structures . It should be noted that for 2T samples the compositional profiles were averaged across regions of QWs with identical thicknesses and only the indium tail at the upper interface has been recorded.…”

Section: Resultsmentioning

confidence: 71%

“…One can see that the indium penetration into the barrier decreases from sample 1T, Q2T, ∼Q2T to 2T indicating that a correlation may exist with the thickness of the low temperature GaN cap layer grown on top of the QW. Computations by Karpov et al using a rate‐equation model which allowed an unsteady‐state simulation of indium adatom segregation effects under time‐dependent conditions demonstrated the formation of a compositional tail at the QW top interface . Their model suggests that when the temperature in the reactor increases the surface coverage of indium decreases.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures

Massabuau

Davies

Blenkhorn

et al. 2014

Physica Status Solidi (b)

View full text Add to dashboard Cite

This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.High resolution transmission electron microscopy has been employed to investigate the impact of the GaN barrier growth technique on the composition profile of InGaN quantum wells (QWs). We show that the profiles deviate from their nominal configuration due to the presence of an indium tail at the upper interface of the QW. This indium tail, thought to be associated with a segregation effect from the indium surfactant layer, has been shown to strongly depend on the growth method. The effect of this tail has been investigated using a self-consistent Schrödinger-Poisson simulation. For the simulated conditions, a graded upper interface has been found to result in a decreased electron-hole wavefunction overlap of up to 31% compared to a QW with a rectangular profile, possibly leading to a decrease in radiative-recombination rate. Therefore, in order to maximize the efficiency of a QW structure, it is important to grow the active region using a growth method which leads to QW interfaces which are as abrupt as possible. The results of this experiment find applications in every study where the emission properties of a device are correlated to a particular active region design.

show abstract

Section: Resultsmentioning

confidence: 71%

Section: Resultsmentioning

confidence: 99%

Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures

Massabuau

Davies

Blenkhorn

et al. 2014

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…19,20 Raman scattering measurements have been carried out at room temperature to study the In-rich clusters in these near-UV MQWs samples. The inset of Fig.…”

Section: Resultsmentioning

confidence: 99%

Enhanced carrier localization in near-ultraviolet multiple quantum wells using quaternary AlInGaN as the well layers

et al. 2015

View full text Add to dashboard Cite

The structural and optical properties of near-ultraviolet (UV) multiple quantum wells (MQWs) structure by using quaternary AlInGaN as well layers has been investigated. The composition of barrier layers is determined by three In 0.08 Ga 0.92 N/Al x In y Ga 1−x−y N multiple quantum wells samples with varying Al content in barrier layers. The composition of the well and barrier layers is estimated by the results of high-resolution X-ray diffraction (HRXRD). In spite of the larger lattice mismatch, the remarkable enhancement of photoluminescence (PL) intensity of the MQWs sample with AlInGaN as well layers is attributed to the increase of the carrier localized states induced by the increase of the compositional fluctuation in the AlInGaN well layers. The S-shaped temperaturedependence of PL peak energy indicates the existence of localized states induced by the potential fluctuations. The magnitude of carrier localization which is estimated by the fitting results has been increased significantly in the Al 0.11 In 0.13 Ga 0.76 N/Al 0.16 In 0.045 Ga 0.795 N MQWs due to the improvement of the spatial potential fluctuations by using quaternary AlInGaN as well layers.

show abstract

“…Despite the great success in InGaN-based blue-light LEDs [1,8,15,20,21], high-efficiency green-light LEDs with a high In concentration is still challenging, especially in organometallic vapor phase epitaxy (OMVPE). Due to the large bond length difference between GaN and InN, segregated In ad-layers or In rich islands on the surface are often observed in the OMVPE growth of InGaN [8,[22][23][24]. Such large size mismatch may also lead to spinodal decomposition, resulting in a large miscibility gap and a limited In concentration in InGaN [14].…”

Section: Introductionmentioning

confidence: 99%

Surfactant antimony enhanced indium incorporation on InGaN (0001¯) surface: A DFT study

Zhang

Zhu

2016

Journal of Crystal Growth

View full text Add to dashboard Cite

Indium Segregation Kinetics in MOVPE of InGaN-Based Heterostructures

Cited by 25 publications

References 13 publications

Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures

Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures

Enhanced carrier localization in near-ultraviolet multiple quantum wells using quaternary AlInGaN as the well layers

Surfactant antimony enhanced indium incorporation on InGaN (0001¯) surface: A DFT study

Contact Info

Product

Resources

About