Growth and morphological changes of chemically vapour deposited diamond in the presence of argon

Shih, Han C.; Sung, Cheng-Kuo; Fan, W.L.; Hsu, Wen‐Kuang

doi:10.1016/0040-6090(93)90759-i

Cited by 19 publications

(7 citation statements)

References 21 publications

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“…15,16 An earlier paper by Zhu et al used a tubular microwave plasma reactor and reported diamond film growth rates and some emission intensity data. The dependence on the Ar fraction was very different from ours, but the correlation between C 2 emission and growth rate appears similar.…”

Section: Discussionmentioning

confidence: 98%

“…We cannot account for the different dependence of growth rate and C 2 emission on the Ar fraction between our measurements and that of earlier work. 15,16 It is, of course, the fact that very different reactors were used for all these experiments. Qualitatively, the limited number of earlier correlations between C 2 emission and growth rate are in agreement with the results reported here.…”

Section: Discussionmentioning

confidence: 99%

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Carbon dimer, C2, as a growth species for diamond films from methane/hydrogen/argon microwave plasmas

Gruen

Zuiker

Krauss

et al. 1995

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

100

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It was shown recently that nanocrystalline diamond films can be grown using fullerenes as precursors in an argon microwave plasma without the addition of hydrogen or oxygen. Extensive fragmentation of C60 in the microwave discharge leads to a copious production of the carbon dimer molecule, C2, as evidenced by intense Swan-band emission. Here we have investigated hydrogen–methane–argon plasmas and found that high argon fractions (≳50%) lead to intense C2 emission, indicating significant production of C2 in the plasma. In situ measurements of the substrate reflectivity were used to determine the growth rate. A correlation between the C2 emission intensity and growth rate was observed. These results prompted us to propose a scheme for diamond film growth on the (100)–(2×1): H reconstructed diamond surface with C2 as the growth species. Each surface carbon atom (bonded twice to carbons in the bulk, once to a surface carbon, creating a ‘‘dimer’’ and then forming a five-membered ring) is terminated with hydrogen. With C2 as the growth species, no hydrogen abstraction reactions are required because its very high energy of adsorption (815 kJ/mol C) allows the C2 molecule to insert directly into the dimer bonds. A second C2 can form across the adjoining trough. The added carbons then dimerize, forming a new (2×1) surface on a new layer with dimer rows orthogonal to the original rows.

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Section: Discussionmentioning

confidence: 98%

Section: Discussionmentioning

confidence: 99%

Carbon dimer, C2, as a growth species for diamond films from methane/hydrogen/argon microwave plasmas

Gruen

Zuiker

Krauss

et al. 1995

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

100

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“…To fabricate electronic and optical devices, smooth films are required, which can be obtained using nanometer-sized grains. 6,7 Growth theory for these plasma gases is different from the conventional type of gases. 2 Argon has been used in place of hydrogen in carbon-oxygen-argon or carbon-argon systems.…”

Section: Introductionmentioning

confidence: 97%

“…[1][2][3][4][5][6][7][8][9] Typically, hydrogen-methane gas mixtures are used as precursors although other gases such as nitrogen and noble gases have also been used to grow smooth nanocrystalline films. [1][2][3][4][5][6][7][8][9] Typically, hydrogen-methane gas mixtures are used as precursors although other gases such as nitrogen and noble gases have also been used to grow smooth nanocrystalline films.…”

Section: Introductionmentioning

confidence: 99%

Raman spectroscopy study of the influence of processing conditions on the structure of polycrystalline diamond films

Ramamurti

Shanov

Singh

et al. 2006

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Electrical conduction in undoped ultrananocrystalline diamond thin films and its dependence on chemical composition and crystalline structure Diamond films are prepared by microwave plasma-enhanced chemical-vapor deposition on Si ͑100͒ substrates using the H 2 -Ar-CH 4 gases. Raman scattering data, including the peak position, intensity, area, and width, are analyzed in depth and used to obtain the sp 3 -and sp 2 -bonded carbon contents and the nature of internal stresses in the films. Polarization behavior of the Raman peaks is analyzed to assess its role on the quantitative analysis of the diamond films, which suggested that the 1150 cm −1 Raman peak in nanocrystalline diamond films could be attributed to sp 2 -bonded carbon. The role of the H 2 / Ar content in the gas mixture and substrate temperature on the characteristics of the diamond film is studied. Thickness and grain size of diamond films are also determined by scanning electron microscopy and related to the deposition conditions and Raman results. Deposition conditions, which led to highest sp 3 -bonded carbon content and growth rate, are identified.

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“…All these results, including previous studies reported by Shih et al. [9] and Zhu et al [10], refer to diamond deposition processes from microwave plasmas produced at high pressures (over 40 Torr) and hot substrates (over 500 8C).…”

Section: Introductionmentioning

confidence: 97%

Nanocrystalline diamond thin films deposited by 35 kHz Ar-rich plasmas

López

Gordillo‐Vázquez²,

Albella

2002

Applied Surface Science

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Growth and morphological changes of chemically vapour deposited diamond in the presence of argon

Cited by 19 publications

References 21 publications

Carbon dimer, C2, as a growth species for diamond films from methane/hydrogen/argon microwave plasmas

Carbon dimer, C2, as a growth species for diamond films from methane/hydrogen/argon microwave plasmas

Raman spectroscopy study of the influence of processing conditions on the structure of polycrystalline diamond films

Nanocrystalline diamond thin films deposited by 35 kHz Ar-rich plasmas

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