Growth and optical characterization of single quantum well structure of submonolayer ZnS/ZnTe

Kim, J.S.; Kim, H.M.; Park, H.L.; Choi, Jae Chan

doi:10.1016/j.ssc.2005.11.018

Cited by 11 publications

(1 citation statement)

References 10 publications

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“…Сведения о реальной структуре тонкого слоя, которая зависит от элементного состава гетероструктуры, номинальной толщины слоя и технологии его роста, можно получить методами электронной микроскопии и оптической спектроскопии. Данные ряда работ [1][2][3][4][5][6][7][8][9] для гетероструктур типа II−VI, в частности, для системы CdTe/ZnTe с одной и той же номинальной толщиной узкозонного слоя, существенно различаются относительно энергетического положения и формы полосы излучения. Это свидетельствует о сильной зависимости реального строения тонкого слоя от технологических условий его формирования.…”

Section: Introductionunclassified

Фотолюминесценция гетероструктур CdTe/ZnTe с номинальными толщинами слоев CdTe от 1 до 8 монослоев, выращенных методом атомного наслаивания

Агекян¹,

Serov²,

Filosofov³

et al. 2020

Физика Твердого Тела

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The luminescence of CdTe layers with a nominal thickness of 1, 2, 4, and 8 monolayers grown by atomic layer epitaxy in ZnTe matrix was studied. It is shown that layers with a thickness of 1 and 2 monolayers are homogeneous, while layers with a nominal thickness of 4 and 8 monolayers are the planar QD arrays. The sizes of QDs and their size dispersion increase with an increase in the nominal thickness of CdTe layer. The luminescence excitation spectra of CdTe layer in the samples vary significantly. It has been shown that, depending on the energy distance between the CdTe and ZnTe exciton levels, the ratio of contributions to the energy transfer via the exciton ZnTe and charge carriers varies greatly.

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Section: Introductionunclassified

Фотолюминесценция гетероструктур CdTe/ZnTe с номинальными толщинами слоев CdTe от 1 до 8 монослоев, выращенных методом атомного наслаивания

Агекян¹,

Serov²,

Filosofov³

et al. 2020

Физика Твердого Тела

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7.1.5 Quantum wells and superlattices based on ZnTe and its alloys

Klingshirn

2013

Growth and Structuring

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Electronic structure and optical properties of Cu-doping and Zn vacancy impurities in ZnTe

Qing

et al. 2013

J Mol Model

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The geometric structures of perfect ZnTe, that with Zn vacancy (Zn0.875Te), and Cu-doped ZnTe (Zn0.875Cu0.125Te) were optimized using the pseudopotential plane wave (PP-PW) method based on the density functional theory (DFT) within generalized gradient approximation (GGA). The cohesive energy, band structure, density of states, and Mulliken populations were calculated and discussed in detail. On the other hand, an accurate calculation of linear optical functions (the dielectric function, refraction index, reflectivity, conductivity function, and energy-loss spectrum) was performed. The results demonstrated that compared to the perfect ZnTe, the lattice parameters of Zn0.875Te and Zn0.875Cu0.125Te were changed and the cell volumes decreased to some extent due to the vacancy and introduction of impurity. A vacancy acceptor level and an acceptor impurity level were produced in Zn0.875Te and Zn0.875Cu0.125Te, respectively. By comparison, Cu doping in the ZnTe system is relatively stable while the monovacancy system is not.

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Growth and optical characterization of single quantum well structure of submonolayer ZnS/ZnTe

Cited by 11 publications

References 10 publications

Фотолюминесценция гетероструктур CdTe/ZnTe с номинальными толщинами слоев CdTe от 1 до 8 монослоев, выращенных методом атомного наслаивания

Фотолюминесценция гетероструктур CdTe/ZnTe с номинальными толщинами слоев CdTe от 1 до 8 монослоев, выращенных методом атомного наслаивания

7.1.5 Quantum wells and superlattices based on ZnTe and its alloys

Electronic structure and optical properties of Cu-doping and Zn vacancy impurities in ZnTe

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