Growth and optical properties of catalyst-free InP nanowires on Si (100) substrates

Sheng, Yu; Miao, Guoqing; Jin, Yixin; Zhang, Ligong; Song, Hang; Jiang, Hong; Li, Zhiming; Li, Dabing; Sun, Xueqing

doi:10.1016/j.physe.2009.12.040

Cited by 14 publications

(5 citation statements)

References 38 publications

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“…Samples grown under both lower growth temperatures and TMI flow conditions exhibit mainly BA nanowires with constant diameter along their lengths. Their overall morphologies resemble those grown by metallic In-nanoparticles, or self-catalyzed nanowires [41][42][43][44][45][46][47]. We must note that In-catalyzed InP nanowires usually display a high density of stacking faults [41,43,44,46]; in fact, such defects are more easily observed in our BA nanowires while EDS spectra at the apex shows only P and In peaks.…”

Section: Ag-based Catalysts and Growth Modelsmentioning

confidence: 70%

Different growth regimes in InP nanowire growth mediated by Ag nanoparticles

Oliveira¹,

Zavarize²,

Tizei³

et al. 2017

Nanotechnology

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We report on the existence of two different regimes in one-step Ag-seeded InP nanowire growth. The vapor-liquid-solid-mechanism is present at larger In precursor flows and temperatures, ∼500 °C, yielding high aspect ratio and pure wurtzite InP nanowires with a semi-spherical metal particle at the thin apex. Periodic diameter oscillations can be achieved under extreme In supersaturations at this temperature range, showing the presence of a liquid catalyst. However, under lower temperatures and In precursor flows, large diameter InP nanowires with mixed wurtzite/zincblende segments are obtained, similarly to In-assisted growth. Chemical composition analysis suggest that In-rich droplet formation is catalyzed at the substrate surface via Ag nanoparticles; this process might be facilitated by the sulfur contamination detected in these nanoparticles. Furthermore, part of the original Ag nanoparticle remains solid and is embedded inside the actual catalyst, providing an in situ method to switch growth mechanisms upon changing In precursor flow. Nevertheless, our Ag-seeded InP nanowires exhibit overall optical emission spectra consistent with the observed structural properties and similar to Au-catalyzed InP nanowires. We thus show that Ag nanoparticles may be a suitable replacement for Au in InP nanowire growth.

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Section: Ag-based Catalysts and Growth Modelsmentioning

confidence: 70%

Different growth regimes in InP nanowire growth mediated by Ag nanoparticles

Oliveira¹,

Zavarize²,

Tizei³

et al. 2017

Nanotechnology

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“…The catalyst indium droplets are fabricated by the thermal decomposition of TMIn. For catalyst-free InP nanowire growth, it has been tested in our experiments before that the temperature is in the range of 330 °C to 370 °C [ 17 , 18 ]. In this range, indium droplets can be fabricated [ 19 ].…”

Section: Resultsmentioning

confidence: 99%

Stages in the catalyst-free InP nanowire growth on silicon (100) by metal organic chemical vapor deposition

Miao

Zhang

2012

Nanoscale Res Lett

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Catalyst-free InP nanowires were grown on Si (100) substrates by low-pressure metal organic chemical vapor deposition. The different stages of nanowire growth were investigated. The scanning electron microscopy images showed that the density of the nanowires increased as the growth continued. Catalyzing indium droplets could still be fabricated in the nanowire growing process. X-ray diffraction showed that the nanowires grown at different stages were single crystalline with <111 > growth direction. The photoluminescence studies carried out at room temperature on InP nanowires reveal that the blueshift of photoluminescence decreased as the growing time accumulates, which is related to the increase in the diameter, rather than the length. Raman spectra for nanowires at different growing stages show that the quality of the nanowire changes. The growth of InP nanowires at different growing stages is demonstrated as a dynamic process.

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“…103) that this In-seeded mechanism could produce ternary In(As)P on SiO x -covered Si (111) with a defected wurtzite (WZ) crystal structure and reasonable optical properties, although not yet with controlled epitaxial growth directions. Later Yu et al 104 reported similar InP nanowires, but having a highly twinned ZB crystal structure, on native oxide-covered Si(001).…”

Section: In-seeded Iii-v Nanowire Growthmentioning

confidence: 92%

Metal-seeded growth of III–V semiconductor nanowires: towards gold-free synthesis

Dick

Caroff

2014

Nanoscale

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Semiconductor nanowires composed of III-V materials have enormous potential to add new functionality to electronics and optical applications. However, integration of these promising structures into applications is severely limited by the current near-universal reliance on gold nanoparticles as seeds for nanowire fabrication. Although highly controlled fabrication is achieved, this metal is entirely incompatible with the Si-based electronics industry. In this Feature we review the progress towards developing gold-free bottom-up synthesis techniques for III-V semiconductor nanowires. Three main categories of nanowire synthesis are discussed: selective-area epitaxy, self-seeding and foreign metal seeding, with main focus on the metal-seeded techniques. For comparison, we also review the development of foreign metal seeded synthesis of silicon and germanium nanowires. Finally, directions for future development and anticipated important trends are discussed. We anticipate significant development in the use of foreign metal seeding in particular. In addition, we speculate that multiple different techniques must be developed in order to replace gold and to provide a variety of nanowire structures and properties suited to a diverse range of applications.

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Growth and optical properties of catalyst-free InP nanowires on Si (100) substrates

Cited by 14 publications

References 38 publications

Different growth regimes in InP nanowire growth mediated by Ag nanoparticles

Different growth regimes in InP nanowire growth mediated by Ag nanoparticles

Stages in the catalyst-free InP nanowire growth on silicon (100) by metal organic chemical vapor deposition

Metal-seeded growth of III–V semiconductor nanowires: towards gold-free synthesis

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