Stages in the catalyst-free InP nanowire growth on silicon (100) by metal organic chemical vapor deposition

Miao, Guobin; Zhang, Dengwei

doi:10.1186/1556-276x-7-321

Cited by 6 publications

(4 citation statements)

References 20 publications

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“…In these spectra, we observe only two peaks at 8.9 and 10.3 THz, which we attribute to the TO and LO phonons of InP, respectively. These values agree with values reported in InP nanowires and display a red shift compared to bulk InP. , The TO mode is common to both experimental techniques. However, the pump–probe data displays three prominent peaks between the TO and LO phonons frequencies.…”

Section: Resultssupporting

confidence: 89%

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Ultrafast Optical Generation of Coherent Bright and Dark Surface Phonon Polaritons in Nanowires

Mante

Lehmann²,

Finkelstein-Shapiro³

et al. 2020

ACS Photonics

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The subwavelength confinement and enhanced electric field created by plasmons allow precise sensing and enhanced light−matter interaction. However, the high frequency and short lifetime of plasmons limit the full potential of this technology. It is crucial to find substitutes and to study their dynamics. Here, we propose an experimental approach allowing the time-domain study of surface phonon polaritons. We first build a theoretical framework for the interaction of ultrashort pulses of light with polar materials. We then perform femtosecond pump− probe experiments and demonstrate the generation and timeresolved detection of surface phonon polaritons. By comparing experiments and simulations, we show the presence of both bright and dark modes with quality factors up to 115. We then investigate mode-dependent decay and energy transfer to the environment. Our results offer a platform for the experimental exploration of the dynamics of surface phonon polaritons and of the role of coherence in energy transfer.

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Section: Resultssupporting

confidence: 89%

“…These values agree with values reported in InP nanowires and display a red shift compared to bulk InP. 40,41 The TO mode is common to both experimental techniques. However, the pump−probe data displays three prominent peaks between the TO and LO phonons frequencies.…”

supporting

confidence: 87%

Ultrafast Optical Generation of Coherent Bright and Dark Surface Phonon Polaritons in Nanowires

Mante

Lehmann²,

Finkelstein-Shapiro³

et al. 2020

ACS Photonics

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“…In typical vapor-liquid-solid (VLS) growth [ 17 ] of groups III–V nanowires, gold is the most commonly used catalyst material but is undesirable because gold forms deep level traps [ 18 ]. To overcome this problem, previous studies have shown that nanowires of groups III–V binary compounds can been grown via VLS process using group III metal as the catalyst [ 19 – 25 ]. However, relatively few studies have reported catalyst-free growth of ternary compound nanowires [ 26 – 29 ].…”

Section: Introductionmentioning

confidence: 99%

Self-Catalyzed Growth and Characterization of In(As)P Nanowires on InP(111)B Using Metal-Organic Chemical Vapor Deposition

et al. 2016

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We report the growth of vertical <111>-oriented InAsxP1−x (0.11 ≤ x ≤ 0.27) nanowires via metal-organic chemical vapor deposition in the presence of indium droplets as catalysts on InP(111)B substrates at 375 °C. Trimethylindium, tertiarybutylphosphine, and tertiarybutylarsine are used as the precursors, corresponding to P/In and As/In molar ratios of 29 and 0.01, respectively. The as-grown nanowire growth morphologies, crystallinity, composition, and optical characteristics are determined using a combination of scanning and transmission electron microscopies, electron diffraction, and X-ray photoelectron, energy dispersive X-ray, and Raman spectroscopies. We find that the InAsxP1−x nanowires are tapered with narrow tops, wider bases, and In-rich In-As alloy tips, characteristic of vapor-liquid-solid process. The wires exhibit a mixture of zinc blende and wurtzite crystal structures and a high density of structural defects such as stacking faults and twins. Our results suggest that the incorporation of As into InP wires decreases with increasing substrate temperature. The Raman spectra obtained from the In(As)P nanowires reveal a red-shift and lower intensity of longitudinal optical mode relative to both InP nanowires and InP(111)B bulk, due to the incorporation of As into the InP matrix.Electronic supplementary materialThe online version of this article (doi:10.1186/s11671-016-1427-4) contains supplementary material, which is available to authorized users.

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“…Recently, Miao et al . demonstrated a catalyst-free InP nanowire growth on Si (001) by MOVPE [31]. The density and size of the nanowires can be controlled, but the positions of the nanowires are difficult to define.…”

Section: Resultsmentioning

confidence: 99%

Dislocation reduction of InAs nanofins prepared on Si substrate using metal-organic vapor-phase epitaxy

Hsu

Chen

2012

Nanoscale Res Lett

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InAs nanofins were prepared on a nanopatterned Si (001) substrate by metal-organic vapor-phase epitaxy. The threading dislocations, stacked on the lowest-energy-facet plane {111}, move along the SiO2 walls, resulting in a dislocation reduction, as confirmed by transmission electron microscopy. The dislocations were trapped within a thin InAs epilayer. The obtained 90-nm-wide InAs nanofins with an almost etching-pit-free surface do not require complex intermediate-layer epitaxial growth processes and large thickness typically required for conventional epitaxial growth.

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Stages in the catalyst-free InP nanowire growth on silicon (100) by metal organic chemical vapor deposition

Cited by 6 publications

References 20 publications

Ultrafast Optical Generation of Coherent Bright and Dark Surface Phonon Polaritons in Nanowires

Ultrafast Optical Generation of Coherent Bright and Dark Surface Phonon Polaritons in Nanowires

Self-Catalyzed Growth and Characterization of In(As)P Nanowires on InP(111)B Using Metal-Organic Chemical Vapor Deposition

Dislocation reduction of InAs nanofins prepared on Si substrate using metal-organic vapor-phase epitaxy

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