2020
DOI: 10.1039/d0tc00473a
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Growth and optimization of hybrid perovskite single crystals for optoelectronics/electronics and sensing

Abstract: Organic-inorganic hybrid perovskites, which combine the advantages of superior optical and electronic properties and solution-processed manufacturing, have emerged as a new class of revolutionary optoelectronic devices with the potential for...

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Cited by 20 publications
(12 citation statements)
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“…Synthesis methods for those materials have been reviewed elsewhere. [17,25,[31][32][33][34][35][36][37][38][39][40][41][42][43][44] It is worth mentioning that the growth techniques are similar to those employed for MAPX crystals and thin films. As an example, formamidinium lead halide perovskite and mixed cations perovskite, as well as mixed halides perovskites and FAPbBr 3−x Cl x or FAPb 1−x Sn x Br 3 , were succesfully grown by ITC.…”
Section: Summary Of the Growth Methodsmentioning
confidence: 99%
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“…Synthesis methods for those materials have been reviewed elsewhere. [17,25,[31][32][33][34][35][36][37][38][39][40][41][42][43][44] It is worth mentioning that the growth techniques are similar to those employed for MAPX crystals and thin films. As an example, formamidinium lead halide perovskite and mixed cations perovskite, as well as mixed halides perovskites and FAPbBr 3−x Cl x or FAPb 1−x Sn x Br 3 , were succesfully grown by ITC.…”
Section: Summary Of the Growth Methodsmentioning
confidence: 99%
“…Although we chose to focus on MAPX SC, other types of perovskite highly promising for the solar industry were successfully grown as SC, and has been reviewed elsewhere (17,25,(30)(31)(32)(33)(34)(35)(36)(37)(38)(39)(40)(41)(42)(43). For example formamidinium lead halide perovskite FAPbX 3 and mixed cations perovskite FA (1≠x) MA x PbI 3 , as well as mixed halides perovskites and even FAPbBr 3≠x Cl x or FAPb 1≠x Sn x Br 3 , were succesfully grown by ITC (73)(74)(75)(76)(77)(78)(79).…”
Section: Inverse Temperature Crystallization -Itcmentioning
confidence: 99%
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“…As mentioned above, the superior photophysical and electronic properties of lead halide perovskites, including long carrier lifetimes, large absorption coefficients, high light yields, and cost-effective growth methods [48][49][50][51][52] , enable them as promising candidates for nextgeneration optoelectronic devices, such as light-emitting diodes [53][54][55][56] , lasers 57 , solar cells [58][59][60][61] and photodectors [62][63][64][65][66][67] . Furthermore, several prerequisites should be fulfilled for suitable semiconductors working as high-performance radiation detectors.…”
Section: Superb Properties Of Halide Perovskites For Radiation Detectionmentioning
confidence: 99%
“…Single-crystal halide perovskites are advantageous for optoelectronic devices, due to the reduced structural and ionic defects and improved material properties; which, meanwhile, would also be promising for the highly stable FETs. ,, Bulk perovskite crystals have been widely demonstrated, , but their practical applications have been limited because their thicknesses are greater than carrier diffusion lengths and they are difficult to integrate with other materials. Epitaxial growth offers high phase purity and crystallinity, low trap density, and tunable properties for device applications, particularly the FETs. In this regard, searching for versatile epitaxial techniques is highly desired for the growth of high-quality perovskite thin single crystals (TSCs). , Attempts have been made to grow perovskite epitaxial TSCs on different substrates through different modes: vapor-phase epitaxy (VPE) methods under strict stoichiometry control, ionic epitaxy, remote epitaxy, and van der Waals epitaxy. ,, Despite the viability of vapor-based epitaxy, solution epitaxy is highly desired for producing halide perovskite TSCs, owing to the advantages of low cost and easy process under near-ambient conditions. , …”
Section: Introductionmentioning
confidence: 99%