Growth and properties analysis of AlxGa2-xO3 thin film by radio frequency magnetron sputtering using Al/Ga2O3 target

Nie, Yiyin; Jiao, Shujie; Meng, Fanxi; Lü, Hongliang; Wang, Dongbo; Li, Lin; Gao, Shiyong; Wang, Jinzhong; Wang, Xianghu

doi:10.1016/j.jallcom.2019.05.268

Cited by 31 publications

(5 citation statements)

References 32 publications

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“…Figure b shows that increasing the annealing temperature causes a shift in the peak position of the β(002) diffraction peak to a higher angle and a decrease in the crystal interplanar spacing. These findings are consistent with the conclusions obtained by Nie et al and Lu et al The peak position of β(002) was almost unchanged at 600, 700, and 800 °C. However, a higher annealing temperature of 900 °C leads to a larger shift in the peak position.…”

Section: Resultssupporting

confidence: 93%

Investigation on the Bandgap-Adjustable (Ga_1–xIn_x)₂O₃ Film Prepared by Magnetron Sputtering

Lin,

Xie,

Yang

et al. 2024

ACS Appl. Electron. Mater.

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With the continuous development of Ga 2 O 3 ultrawide bandgap material and devices, the demand for Ga 2 O 3 -based heterostructure has been increasing in recent years. (Ga 1−x In x ) 2 O 3 alloy, which boasts an adjustable bandgap, offers greater flexibility in the creation of optoelectronic and microelectronic devices. This paper presents a thorough analysis of (Ga 1−x In x ) 2 O 3 films fabricated using magnetron cosputtering with Ga 2 O 3 and In 2 O 3 targets. By modifying the sputtering power of the In 2 O 3 target, (Ga 1−x In x ) 2 O 3 films with the In content ranging from 0 to 0.81 can be produced, which can provide an adjustable bandgap within 4.94−3.42 eV. Meanwhile, the influences of the O 2 /Ar ratio and annealing temperature on the (Ga 1−x In x ) 2 O 3 films are analyzed, and a high O 2 /Ar ratio can enhance the flatness of the film by reducing the oxygen vacancy and increasing its density; a high annealing temperature can improve the crystallization quality of (Ga 1−x In x ) 2 O 3 films. KEYWORDS: (Ga 1−x In x ) 2 O 3 , magnetron sputtering, Ga 2 O 3 , heterostructures, adjustable bandgap

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Section: Resultssupporting

confidence: 93%

Investigation on the Bandgap-Adjustable (Ga_1–xIn_x)₂O₃ Film Prepared by Magnetron Sputtering

Lin,

Xie,

Yang

et al. 2024

ACS Appl. Electron. Mater.

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“…As shown in Figure e, the binding energy peak of Ga 2p 3/2 from β-Ga 2 O 3 :15%Al is centered at 1118.3 eV, which is within the range of the value of Ga 3+ , thus indicating the presence of Ga 3+ . As shown in Figure f, the intensity of the Al 2p peak increases with the increase of Al 3+ doping concentration, and the peaks are located at approximately 74.15 eV, which is within the range of the value of Al 3+ , thus implying the presence of Al 3+ rather than metallic Al in the crystal. , …”

Section: Results and Discussionmentioning

confidence: 63%

Band Gap Engineering in β-Ga₂O₃ for a High-Performance X-ray Detector

Chen

Tang

et al. 2021

ACS Appl. Electron. Mater.

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Gallium oxide (Ga2O3) attracts great attention in the field of X-ray detection because of its ultrawide band gap, high breakdown electric field, and high X-ray absorption coefficient. However, unintentionally doped Ga2O3 tends to have low resistivity because of the shallow donors provided by unintentionally doped impurity elements or intrinsic defects. Iron and magnesium ion doping can increase the resistivity of β-Ga2O3, but the carrier drift length and carrier collection efficiency are greatly reduced because of the introduction of deep-level impurities. Here, Al-doped β-Ga2O3 (β-Ga2O3:Al) single crystals with high resistivity are obtained through band gap engineering. The mechanism by which Al3+ doping can increase the resistivity of the β-Ga2O3 crystal is discussed. A β-Ga2O3:15%Al-based X-ray detector with high resistivity and quality is prepared. The detector demonstrates a high sensitivity of 851.6 μC Gyair –1 cm–2, which is 42 times higher than that of the commercial amorphous Se X-ray detector. Furthermore, the detector exhibits a fast response speed and both rise time and decay time of less than 0.05 s. The high performance of the detector is attributed to the high resistivity and high quality of the crystal. This work presents a method to obtain high-performance X-ray detectors based on β-Ga2O3 single crystals through band gap engineering.

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“…[ 22 ] It has been demonstrated that the bandgap of β‐(Al x Ga 1− x ) 2 O 3 depends on the Al composition ( x ), and increases with it. [ 23 ] Many works in the literature report the growth of β‐(Al x Ga 1− x ) 2 O 3 thin films using molecular beam epitaxy (MBE), [ 24–26 ] metal organic chemical vapor deposition (MOCVD), [ 27 ] pulsed laser deposition (PLD), [ 28 ] sputtering [ 29 ] and solution combustion synthesis, [ 30 ] etc., and studies on the Al incorporation effect on the surface morphology and crystalline quality, which are summarized in Table 1 . β‐(Al x Ga 1− x ) 2 O 3 epitaxial film by MOCVD and MBE is mainly used for high‐power electronic applications.…”

Section: Introductionmentioning

confidence: 99%

Bandgap Tailoring of Monoclinic Single‐Phase β‐(Al_xGa_1−x)₂O₃ (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga₂O₃/Al₂O₃ Heterojunction at High Temperatures

Feng

et al. 2021

Physica Status Solidi (a)

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Recently, β-Ga 2 O 3 has attracted extensive attention because of its ultrawide bandgap (%4.8 eV), [1,2] high theoretical breakdown electric field (E br ) (8 MV cm À1 ), [3,4] and higher Baliga figure of merit (BFOM) compared with GaN and SiC. The highly mature bulk growth and thin film deposition techniques [5][6][7] make both homo- [8][9][10] and heteroepitaxial [11,12] growth of Ga 2 O 3 thin films with controllable doping possible, [13][14][15][16] which is important for practical applications such as power switches, [17,18] high-efficiency devices, [19] and deep-UV photodetectors. [20,21] To develop and optimize modern electronic and optoelectronic devices with great flexibility, energy band engineering is necessary for designing and preparing barrier layers, which show better carrier confinement with larger band offsets in device structures. [22] It has been demonstrated that the bandgap of β-(Al x Ga 1Àx ) 2 O 3 depends on the Al composition (x), and increases with it. [23] Many works in the literature report the growth of β-(Al x Ga 1Àx ) 2 O 3 thin films using molecular beam epitaxy (MBE), [24][25][26] metal organic chemical vapor deposition (MOCVD), [27] pulsed laser deposition (PLD), [28] sputtering [29] and solution combustion synthesis, [30] etc., and studies on the Al incorporation effect on the surface morphology and crystalline quality, which are summarized in Table 1. β-(Al x Ga 1Àx ) 2 O 3 epitaxial film by MOCVD and MBE is mainly used for highpower electronic applications. For instance, by constructing a β-(Al x Ga 1Àx ) 2 O 3 /β-Ga 2 O 3 heterojunction with a Si delta-doped layer in β-(Al x Ga 1-x ) 2 O 3 to prepare a modulated doped field effect

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Growth and properties analysis of AlxGa2-xO3 thin film by radio frequency magnetron sputtering using Al/Ga2O3 target

Cited by 31 publications

References 32 publications

Investigation on the Bandgap-Adjustable (Ga_1–xIn_x)₂O₃ Film Prepared by Magnetron Sputtering

Investigation on the Bandgap-Adjustable (Ga_1–xIn_x)₂O₃ Film Prepared by Magnetron Sputtering

Band Gap Engineering in β-Ga₂O₃ for a High-Performance X-ray Detector

Bandgap Tailoring of Monoclinic Single‐Phase β‐(Al_xGa_1−x)₂O₃ (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga₂O₃/Al₂O₃ Heterojunction at High Temperatures

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Growth and properties analysis of AlxGa2-xO3 thin film by radio frequency magnetron sputtering using Al/Ga2O3 target

Cited by 31 publications

References 32 publications

Investigation on the Bandgap-Adjustable (Ga1–xInx)2O3 Film Prepared by Magnetron Sputtering

Investigation on the Bandgap-Adjustable (Ga1–xInx)2O3 Film Prepared by Magnetron Sputtering

Band Gap Engineering in β-Ga2O3 for a High-Performance X-ray Detector

Bandgap Tailoring of Monoclinic Single‐Phase β‐(AlxGa1−x)2O3 (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga2O3/Al2O3 Heterojunction at High Temperatures

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Investigation on the Bandgap-Adjustable (Ga_1–xIn_x)₂O₃ Film Prepared by Magnetron Sputtering

Investigation on the Bandgap-Adjustable (Ga_1–xIn_x)₂O₃ Film Prepared by Magnetron Sputtering

Band Gap Engineering in β-Ga₂O₃ for a High-Performance X-ray Detector

Bandgap Tailoring of Monoclinic Single‐Phase β‐(Al_xGa_1−x)₂O₃ (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga₂O₃/Al₂O₃ Heterojunction at High Temperatures