Growth and stability of zinc blende MgS on GaAs, GaP, and InP substrates

Rajan, Akhil; Moug, Richard T.; Prior, K. A.

doi:10.1063/1.4788741

Cited by 9 publications

(6 citation statements)

References 17 publications

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“…Polymorph stabilization has been previously observed for metastable ZB-MgS films deposited on GaAs crystals [32], and for various metastable oxides and nitrides [8,12] grown on single-crystal substrates, up to a small critical thickness, using complex MBE methods. The important differences between this study and all of these prior thinfilm reports are stabilization of high-energy polymorphs in materials systems, where lattice-matched single-crystal substrates are not available, complex deposition methods are not feasible, and thick films are required for practical applications.…”

Section: B Stabilization Mechanismmentioning

confidence: 83%

Templated Growth of Metastable Polymorphs on Amorphous Substrates with Seed Layers

et al. 2020

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Metastable inorganic materials with unique properties are important in many practical applications, but their synthesis is often challenging. In physics, epitaxial stabilization, also known as pseudomorphic growth, is used to synthesize metastable polymorphs, but usually only as very thin films and on expensive single-crystal substrates. In chemistry, the templated growth of inorganic solid-state materials on selfassembled monolayers of organic molecules is reported. Bridging these two fields, here, we show that the synthesis of metastable polymorphs is possible up to large film thickness on amorphous substrates covered with thin inorganic seed layers that serve as templates. The stabilization of a 500-nm-thick metastable wurtzite (WZ) MnTe film by a 5-nm-thick ZnTe seed layer sputtered on amorphous glass substrates is experimentally demonstrated. Theoretical calculations explain this experimental observation by the small WZ polymorph energy relative to that of the ground-state nickeline (NC) structure of MnTe and a large lattice constant difference of the two. The resulting metastable WZ-MnTe polymorph exhibits a wide band gap of 2.7 eV and a low hole density of 10 12 cm −3 , which is relevant to optoelectronic applications. These properties are in sharp contrast to those of the narrow-band-gap highly doped NC-MnTe with 1.3 eV band gap and 10 19 cm −3 hole density. The difference in hole density is due to the calculated difference in the formation energy of manganese vacancy acceptor defects. Overall, these results suggest that templated growth on amorphous substrates with seed layers can be used to synthesize metastable polymorphs of other materials, without the need for expensive single-crystal substrates.

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Section: B Stabilization Mechanismmentioning

confidence: 83%

Templated Growth of Metastable Polymorphs on Amorphous Substrates with Seed Layers

et al. 2020

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“…Using this process, we demonstrated ELO of ZnSe/ZnCdSe quantum well structures from GaAs substrates. 7 Recently, we have successfully grown heterostructures containing ZB MgS on three different III-V substrates: GaP, GaAs, and InP, 8 where the MgS layer has strains ranging from 4.4% (tensile) on InP to À3.0% (compressive) on GaP. In this paper, we demonstrate that ZB MgS can be used as a sacrificial layer in ELO for II-VI heterostructures deposited on all three substrates.…”

Section: Introductionmentioning

confidence: 67%

“…Significantly, there is no miscibility gap in the ternary ZnMgS system and in this case much larger interdiffusion would be expected leading to a substantially smaller d, and we have recently observed MgS/ZnS intermixing in double crystal X-ray spectra from thin ZnS/MgS/ZnS heterostructures. 8 A full calculated phase diagram for CdMgSSe has not been published, but using the same model as used previously for ZnMgSSe, 14 it is found that the region of miscibility is drastically reduced to the percent level. CdSe and MgS are effectively immiscible, giving sharp boundaries between layers and a larger d for the same amount of deposited material.…”

Section: Resultsmentioning

confidence: 99%

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Epitaxial lift-off of II–VI semiconductors from III–V substrates using a MgS release layer

Rajan

Davidson

Moug

et al. 2013

Journal of Applied Physics

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Epitaxial lift-off (ELO) is a post-growth process that allows an epitaxial layer to be removed from its original substrate and transferred to a new one. ELO has previously been successfully demonstrated for III–V materials and also ZnSe based II–VI semiconductors using a MgS sacrificial layer. Following the recent successful growth of epitaxial MgS layers on GaP and InP substrates, in this paper we compare ELO of II–VI epilayers grown on GaP, GaAs, and InP substrates using MgS sacrificial layers in the range of 7–15 nm thick. Good quality lifted layers are obtained rapidly from InP and GaAs substrates. For GaP substrates, ELO is much slower and good quality lifts have only been achieved with ZnSe epilayers. Photoluminescence spectra obtained from epitaxial layers before and after ELO show changes in peak positions, which are compatible with changes of strain in the layer. The layers produced by ELO are flat and free of cracks, suggesting that this is an efficient and convenient method for the transfer of II–VI epitaxial layers to other substrates.

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“…The most stable known selenide of rhenium is the layered transition metal dichalcogenide ReSe 2 but it is likely to be possible to obtain metastable zincblende ReSe layers by non‐equilibrium growth techniques such as molecular beam epitaxy, as has been demonstrated for numerous other transition metal chalcogenides including (for example) MnSe , CrSe (), and MnTe (). Furthermore, HgSe, the end‐member of the 5 d ‐selenide series to which ReSe would belong, occurs naturally in the zincblende structure with a lattice parameter of 6.085 Å and can be grown by MBE on GaSb substrates ().…”

Section: Introductionmentioning

confidence: 99%

Rhenium monoselenide: An investigation by density functional theory

Wolverson

2016

Phys. Status Solidi B

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Abstractauthoren The lattice parameters and the relative stability of the hypothetical material ReSe have been calculated within the LDA approximation in the NaCl, NiAs, and zincblende structures. The zincblende phase appears to remain metallic even when possible strong Coulomb correlations between Re 5d electrons are taken into account by the introduction of a Hubbard U term. Spin‐polarized calculations predict a non‐magnetic phase for U up to 7 eV. Calculations of the phonon dispersion of zincblende ReSe point to an instability with respect to a tetragonal distortion and this raises the interesting possibility that it may also be possible to obtain ReSe experimentally in the PbO (FeSe) structure.

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Growth and stability of zinc blende MgS on GaAs, GaP, and InP substrates

Cited by 9 publications

References 17 publications

Templated Growth of Metastable Polymorphs on Amorphous Substrates with Seed Layers

Templated Growth of Metastable Polymorphs on Amorphous Substrates with Seed Layers

Epitaxial lift-off of II–VI semiconductors from III–V substrates using a MgS release layer

Rhenium monoselenide: An investigation by density functional theory

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