Growth and structure of ultrathin Mn films on Fe(001)

Pfandzelter, R.; Igel, T.; Winter, H.

doi:10.1016/s0039-6028(97)00444-5

Cited by 42 publications

(10 citation statements)

References 36 publications

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“…Important details on growth mode, island density, critical cluster size, etc., can be derived from those data recorded in situ and in real time. [7][8][9][10] For the present conditions, we conclude a type of initial bilayer growth at 243 K and for consecutive layers, as well as for the complete 300 K data, a layer-by-layer growth.…”

supporting

confidence: 76%

“…An interesting alternative to RHEED is scattering of fast atoms or ions instead of fast electrons. [6][7][8][9][10] This technique is similar to RHEED, however, it bears the advantage that the projectile trajectories can be described classically in terms of pure kinematical concepts. 11 For growth of thin semiconductor and metal films, grazing scattering of keV ions has been proven to be a powerful tool to study details on growth mode, island densities, critical island size, etc.…”

mentioning

confidence: 99%

“…11 For growth of thin semiconductor and metal films, grazing scattering of keV ions has been proven to be a powerful tool to study details on growth mode, island densities, critical island size, etc. [6][7][8][9][10][11][12] As an example, we mention studies on growth of ultrathin Co films on Cu͑001͒, where a deviation from a monotonic Arrhenius type of dependence for the island density as a function of inverse growth temperature is observed. 13 This unusual behavior of film growth is attributed to intermixing of film and substrate atoms at elevated temperatures as predicted from density-functional theory ͑DFT͒ calculations and kinetic theory.…”

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confidence: 99%

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Monitoring growth of ultrathin films via ion-induced electron emission

Bernhard

Winter

2005

Phys. Rev. B

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H + , He + , and N + ions with energy of 25 keV are scattered under a grazing angle of incidence from a clean and flat Cu͑001͒ surface during deposition of ultrathin Co films. Making use of the ion-induced emission of electrons allows us to monitor growth of thin films via simple measurements of target current or from energy spectra of emitted electrons. The method provides excellent signals and is also applicable in the regime of poor layer growth.The physics of ultrathin films plays an important role in fundamental research as well as technological applications. As a prominent recent example, we mention the "giant magneto resistance" ͑GMR͒ effect 1,2 present in ultrathin films showing antiferromagnetic couplings. This effect is the basis for the function of reading heads used in modern magnetic hard disk drives or in sensor technology. 3 In particular for fundamental research, the preparation of defined ultrathin films in the monolayer ͑ML͒ regime is crucial. An established method is epitaxial growth of thin films via "molecular-beam epitaxy" ͑MBE͒ ͑Ref. 4͒, where atoms from an evaporator source are deposited on monocrystalline substrates.In the characterization of films, monitoring of growth plays an essential role, since thickness and growth mode determine decisively the structure and the functioning of the system. A widely used technique to inspect growth of thin films in the monolayer regime is "reflection high-energy electron diffraction" ͑RHEED͒ ͑Ref. 5͒, where keV electrons are scattered from the surface of the film under a grazing angle of incidence. In a simple picture, the intensity of reflected electrons depends on the "smoothness" of the film surface. Then, e.g., for "layer-by-layer growth" the morphology changes periodically with coverage, and intensity oscillations for reflected electrons are observed. Aside from the powerful features of RHEED, diffraction phenomena make the general interpretation of data a nontrivial problem.As alternative probes for monitoring film growth, scattering experiments with other microscopic particles are feasible which show a dependence of the backscattered yield on the morphology of the film surface. An interesting alternative to RHEED is scattering of fast atoms or ions instead of fast electrons. 6-10 This technique is similar to RHEED, however, it bears the advantage that the projectile trajectories can be described classically in terms of pure kinematical concepts. 11 For growth of thin semiconductor and metal films, grazing scattering of keV ions has been proven to be a powerful tool to study details on growth mode, island densities, critical island size, etc. 6-12 As an example, we mention studies on growth of ultrathin Co films on Cu͑001͒, where a deviation from a monotonic Arrhenius type of dependence for the island density as a function of inverse growth temperature is observed. 13 This unusual behavior of film growth is attributed to intermixing of film and substrate atoms at elevated temperatures as predicted from density-functional theory ͑DFT͒ calculation...

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confidence: 76%

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confidence: 99%

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confidence: 99%

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Monitoring growth of ultrathin films via ion-induced electron emission

Bernhard

Winter

2005

Phys. Rev. B

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“…[19][20][21][22]. A well collimated ion beam ͑maximum angular divergence Ϯ0.02°͒ is directed on the target at a polar incidence angle ⌽ in ϭ1.0°-2.0°to the surface plane and an azimuthal angle ⌰ in Ϸ8°to the ͓100͔ surface lattice direction.…”

Section: Methodsmentioning

confidence: 99%

“…19 It allows one to determine the completion of individual atomic layers, char-acterize the growth mode, and evaluate the distribution and size of grown islands. 20,21 Though grazing ion-surface scattering does not give diffraction information such as, e.g., RHEED, it has the advantage of an ultimate surface sensitivity and, as discussed in the following, a straightforward interpretation.…”

Section: Submonolayer Filmsmentioning

confidence: 99%

Effects of defect structures at surfaces and thin films on grazing scattering of fast ions

Pfandzelter

1998

Phys. Rev. B

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Magnetism of Low‐dimensional Systems: Theory

Blügel

Bihlmayer

2007

Handbook of Magnetism and Advanced Magnetic Materials

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The article discusses the ground‐state properties of low‐dimensional magnets from the viewpoint of the electronic structure theory. The results presented arose from first‐principles calculations based on the material‐specific density‐functional theory. The focus lies on ultrathin films, wires, chains, and clusters with ferromagnetic, antiferromagnetic, and complex noncollinear magnetic phases. We discuss which systems become magnetic in low dimensions, their respective values for the spin and orbital magnetic moments, the magnetic ground‐state structures, and the magnetic anisotropy determining the orientation of the magnetization as well as how these properties are altered by respective substrates. The emphasis of the article lies in the development of the physical intuition by discussing the chemical trend of the properties of these magnets. Case studies of benchmark systems such as the magnetic surface alloy c(2 × 2)‐MnCu/Cu(100), Ni/Cu(100), which exhibits a magnetic reorientation transition, Fe/W(110), or Co chains on Pt(111) are discussed in more detail. A brief introduction to the basic concepts, notions, models, and theory is given, in order to provide a framework in which the surprising and partly peculiar results can be understood and interpreted. This includes the density‐functional theory, the Heisenberg model, the dipolar and magnetocrystalline anisotropy, the Dzyaloshinsky–Moriya interaction, the Stoner model, the role of the coordination number for the appearance of magnetism, and the estimation of the critical temperature.

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Growth and structure of ultrathin Mn films on Fe(001)

Cited by 42 publications

References 36 publications

Monitoring growth of ultrathin films via ion-induced electron emission

Monitoring growth of ultrathin films via ion-induced electron emission

Effects of defect structures at surfaces and thin films on grazing scattering of fast ions

Magnetism of Low‐dimensional Systems: Theory

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