Growth and TEM and HREM characterisation of TiC crystals grown from high‐temperature solutions

Abstract

The results of TiC crystals and Ni microstructure studies by means of transmission electron microscope are presented. It was shown that Ni may be used as high temperature solvent for obtaining TiC crystals. This paper reports the results of morphology and growth of TiC crystals. The obtained TiC crystals with application of Ni as high temperature solvent were mainly of {001} cubic form, although irregular forms were also observed. Detailed TEM and HREM studies have shown that dislocations are formed in the vicinity of incoherent TiC precipitates in Ni matrices.

Interface characteristics of vertically aligned carbon nanofibers for interconnect applications

“…The misorientation between Ni ͑111͒ and TiC ͑111͒ leads to bonding between Ni and Ti as previously reported. 11 This finding is consistent with interface characteristics between single-wall carbon nanotube and TiC reported previously. 12 The interfacial structure of a CNF array of a few micrometers in length is shown in Fig.…”

Effect of B/C ratio on the microstructure and grain refining efficiency of Al–Ti–C–B master alloy

“…Only when the B/C ratio is appropriate, TiC and TiB 2 will display a very good interaction and co-effectiveness. Secondly, it is interesting to note that TiC x is substoichiometric and x varies in a wide range from 0.49 to 0.98, without the change in the crystal structure [17,18]. So it can be easily doped with the similar B atoms and lots of TiC x B y particles can be found in the Al-Ti-C-B master alloy.…”

Influence of trace boron on the morphology of titanium carbide in an Al–Ti–C–B master alloy

“…Theoretically, the growth unit of TiC is Ti-C 6 octahedron which is composed of one C atom and six Ti atoms, or reversely. An interesting aspect of TiC is that it exhibits non-stoichiometry over a wide range of C/Ti atom ratios (denoted as x) from x = 0.47 to about 0.98, without change in the crystal structure [22,23]. Usually, in TiC crystals, vacancies and carbon atoms randomly occupy lattice sites on one of the interpenetrating f.c.c.…”