Growth by atomic layer epitaxy and characterization of thin films of ZnO

Kopalko, K.; Wójcik, Anna; Godlewski, M.; Łusakowska, E.; Paszkowicz, W.; Domagała, J. Z.; Szczerbakow, A.; Świątek, K.; Dybko, K.

doi:10.1002/pssc.200460660

Cited by 25 publications

(16 citation statements)

References 23 publications

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“…Starting from only inorganic precursors, Kopalko et al used elemental zinc (Zn) in combination with oxygen (O 2 ) at high deposition temperatures of 480 °C, but only observed island growth instead of closed films. [ 28 ] Switching to zinc(II) chloride ([ZnCl 2 ]) with O 2 or H 2 O as coreactant, compact films could be obtained at deposition temperatures between 450 and 550 °C. [ 28,29 ] However, no composition of the layers was reported which is of relevance when halide based precursors can induce some impurities into the films as observed for aluminum oxide.…”

Section: Introductionmentioning

confidence: 99%

“…[ 28 ] Switching to zinc(II) chloride ([ZnCl 2 ]) with O 2 or H 2 O as coreactant, compact films could be obtained at deposition temperatures between 450 and 550 °C. [ 28,29 ] However, no composition of the layers was reported which is of relevance when halide based precursors can induce some impurities into the films as observed for aluminum oxide. [ 30 ] Going away from the halide based precursors, the metalorganic zinc precursor zinc acetate [Zn(CH 3 COO) 2 ] in combination with water enabled the growth of ZnO at lower temperatures (280–360 °C).…”

Section: Introductionmentioning

confidence: 99%

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From Precursor Chemistry to Gas Sensors: Plasma‐Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications

Mai

Mitschker

Bock

et al. 2020

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

From Precursor Chemistry to Gas Sensors: Plasma‐Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications

Mai

Mitschker

Bock

et al. 2020

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“…Si and glass Plasma assisted [256] In(CH3)3 O3, O2, H2O, H2O2 100°C-250°C S i (100), fused quartz, and glass Thermal, ozone assisted Atomic hydrogen 300°C S i (100) Thermal [200] significantly higher growth temperatures and resulted in relatively low GPC values [70]. The ALD window for a typical ZnO ALD process using DEZn and H 2 O as precursors can nonetheless be estimated to be around 110°C-170°C.…”

Section: Oxidesmentioning

confidence: 99%

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

Bıyıklı

Haider

2017

Semicond. Sci. Technol.

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In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/ quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

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“…7 As a binary compound, ZnO represents the simplest form of metal-oxide semiconductors that are being developed for thin film electronics applications. Its simpler structure makes it easier to control its composition during film deposition and therefore many different types of growth techniques have been successfully implemented for thin film transistor applications, including sputtering, 8,9 PLD, 2,10 ALD, 11,12,13 MOCVD, 14 and spin coating. 15 In addition to structural simplicity, ZnO also has some other interesting properties that make it particularly attractive for thin film applications.…”

Section: Introductionmentioning

confidence: 99%

ZnO NANOCRYSTALLINE HIGH PERFORMANCE THIN FILM TRANSISTORS

Bayraktaroglu

Leedy

Neidhard

2013

Frontiers in Electronics

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In this study, nc-ZnO films deposited in a Pulsed Laser Deposition (PLD) system at various temperatures were used to fabricate high performance transistors. As determined by Transmission Electron Microscope (TEM) images, nc-ZnO films deposited at a temperature range of 25°C to 400°C were made of closely packed nanocolums showing strong orientation. The influences of film growth temperature and post growth annealing on device performance were investigated. Various gate dielectric materials, including SiO 2 , Al 2 O 3 , and HfO 2 were shown to be suitable for high performance device applications. Bottom-gate FETs fabricated on high resistivity (>2000 ohm-cm) Si substrates demonstrated record DC and high speed performance of any thin film transistors. Drain current on/off ratios better than 10 12 and sub-threshold voltage swing values of less than 100mV/decade could be obtained. Devices with 2µm gate lengths produced exceptionally high current densities of >750mA/mm. Shorter gate length devices (L G =1.2µm) had current and power gain cut-off frequencies, f T and f max , of 2.9GHz and 10GHz, respectively.

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Growth by atomic layer epitaxy and characterization of thin films of ZnO

Cited by 25 publications

References 23 publications

From Precursor Chemistry to Gas Sensors: Plasma‐Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications

From Precursor Chemistry to Gas Sensors: Plasma‐Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

ZnO NANOCRYSTALLINE HIGH PERFORMANCE THIN FILM TRANSISTORS

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