The influence of chemical surface modifications of gold electrodes on the morphology and the electrical properties has been studied for pentacene based thin-film transistors with channel lengths of L⩽4μm. Self-assembled monolayers (SAMs) of various aliphatic and aromatic organothiols have been used to selectively modify the metallic source and drain electrodes and are further compared with reference samples with untreated electrodes. For all SAM-treated devices a reduced roughness of the pentacene film is observed which is accompanied by a reduction of the threshold voltage from about VT=2V for untreated transistors to −0.9V for transistors with SAM modified electrodes. Using aliphatic SAMs a poor on/off ratio of about 102 was obtained which is attributed to their low conductivity. In contrast, the on/off ratio is enhanced by four orders of magnitude if the surface is modified by an aromatic SAM. In this case a subthreshold swing as low as 0.55V/decade is achieved which corresponds to a trap density reduced by one order of magnitude compared to the reference sample.

Phytoremediation is already regarded as an efficient technique to remove or degrade various pollutants in soils, water and sediments. However, hydrophobic organic molecules such as PAHs, PCBs and PCDD/Fs are much less responsive to bioremediation strategies than, for example, BTEX or LAS. PCDD/Fs and PCBs represent 3 prominent groups of persistent organic pollutants that share common chemical, toxicological and environmental properties. Their widespread presence in the environment may be explained by their chemical and biological stability. This review considers their fate and dissipation mechanisms. It is then possible to identify major sinks and to understand biological activities useful for remediation. Public health and economic priorities lead to the conclusion that alternative techniques to physical treatments are required. This review focuses on particular problems encountered in biodegradation and bioavailability of PCDD/Fs and PCBs. It highlights the potential and limitations of plants and micro-organisms as bioremediation agents and summarises how plants can be used to augment bacterial activity. Phytoremediation is shown to provide some new possibilities in reducing risks associated with dioxins and PCBs.

For the growth of 2D transition metal dichalcogenides, such as molybdenum (MoS2) and tungsten disulfides (WS2), metalorganic chemical vapor deposition (MOCVD) routes are favorable due to their superior scalability, the possibility to tune the processing temperatures by a proper choice of reactants thus avoiding the need for a postdeposition treatment. Herein, the first example of a promising MOCVD route for the direct fabrication of MoS2 and WS2 layers under moderate process conditions is reported. This straightforward route is successfully realized by the combination of metalorganic precursors of Mo or W bearing the amidinato ligand with just elemental sulfur. The formation of stoichiometric hexagonal 2H‐MoS2 and 2H‐WS2 is demonstrated which is confirmed by Raman, X‐ray diffraction, and X‐ray photoelectron spectroscopy studies. The deposited layers are evaluated for their electrocatalytic activity in hydrogen evolution reaction as a proof of principle for application in water splitting devices.

Gd2O3 and Dy2O3 thin films were grown by atomic layer deposition (ALD) on Si(100) substrates using the homoleptic rare earth guanidinate based precursors, namely, tris(N,N'-diisopropy1-2-dimethylamido-guanidinato) gadolinium (III) [Gd(DPDMG)(3)] (1) and tris (N,N'-diisopropyl-2-dimethylamido-guanidinato)dysprosium (III) [Dy(DPDMG)(3)] (2), respectively. Both complexes are volatile and exhibit high reactivity and good thermal stability, which are ideal characteristics of a good ALD precursor. Thin Gd2O3 and Dy2O3 layers were grown by ALD, where the precursors were used in combination with water as a reactant at reduced pressure at the substrate temperature ranging from 150 degrees C to 350 degrees C. A constant growth per cycle (GPC) of 1.1 angstrom was obtained at deposition temperatures between 175 and 275 degrees C for Gd2O3, and in the case of Dy2O3, a GPC of 1.0 angstrom was obtained at 200-275 degrees C. The self-limiting ALD growth characteristics and the saturation behavior of the precursors were confirmed at substrate temperatures of 225 and 250 degrees C within the ALD window for both Gd2O3 and Dy2O3. Thin films were structurally characterized by grazing incidence X-ray diffraction (GI-XRD), atomic force microscopy (AFM), and transmission electron microscopy (TEM) analyses for crystallinity and morphology. The chemical composition of the layer was examined by Rutherford backscattering (RBS) analysis and Auger electron spectroscopy (AES) depth profile measurements. The electrical properties of the ALD grown layers were analyzed by capacitance voltage (C-V) and current-voltage (I-V) measurements. Upon subjection to a forming gas treatment, the ALD grown layers show promising dielectric behavior, with no hysteresis and reduced interface trap densities, thus revealing the potential of these layers as high-k oxide for application in complementary metal oxide semiconductor based devices